Manufacture method of side electrodes

Abstract

The application discloses a manufacture method of side electrodes, comprising: forming side electrode layers on the lateral side of multiple front electrodes and two glass substrates, wherein the twoglass substrates are arranged on two sides of the multiple front electrodes; subjecting the side electrode layers to laser etching to form multiple side electrodes, wherein the side electrodes are electrically connected with the corresponding front electrodes. The manufacture method according to an embodiment of the application has the advantages that circuity on the glass substrates is transferred to the lateral side and connected with the front electrodes, a binding area on an original glass substrate is omitted, the ultranarrow bezel design of a display is achieved, and the manufacture method is widely applicable to small-sized products.

Description

technical field [0001] The present disclosure generally relates to the field of liquid crystal display, and in particular relates to a method for fabricating side electrodes. Background technique [0002] Liquid crystal displays are currently developing towards ultra-thin, ultra-narrow bezel or even no bezel, and the current narrow bezel is basically difficult to achieve a narrow four-sided bezel, because the panel binding position is mostly on the ITO circuit plane of the thin film transistor glass, so that the panel When making thin film transistor glass, it is necessary to reserve at least 1.0-2.0mm area on the edge of the driving circuit, so as to reserve the binding position of integrated circuit or chip-on-chip film. This method is difficult to adapt to the ultra-narrow display. small request. Contents of the invention [0003] In view of the above defects or deficiencies in the prior art, it is desired to provide a method for fabricating side electrodes. [0004] ...

AI Technical Summary

Problems solved by technology

[0002] Liquid crystal displays are currently developing towards ultra-thin, ultra-narrow bezel or even no bezel, and the current narrow bezel is basically difficult to achieve a narrow four-sided bezel, because the panel binding position is mostly on the ITO circuit plane of the thin film transistor glass, so the panel is in When making thin film transistor glass, it is necessary to reserve at least 1.0-2.0mm area on the side of the driving circuit to reserve the binding position of integrated circuit or chip-on-chip film. small request

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