Three-dimensional memory element and manufacturing method thereof

Abstract

The invention discloses a three-dimensional memory element and a manufacturing method thereof. The three-dimensional memory element comprises a substrate, a ridge-shaped laminating layer, a storage layer, a channel layer and a covering layer, wherein the ridge-shaped laminating layer includes a plurality of conductive strips stacked on the substrate along a first direction, the storage layer is stacked on the vertical wall of the ridge-shaped laminating layer along a second direction, wherein the first direction and the second direction form a non-flat angle, the channel layer is stacked on the storage layer along a second direction and comprises a narrow side wall provided with a long edge extending along the first direction, and the covering layer is stacked on the side wall in the thirddirection, and a non-flat angle is formed between the third direction and the second direction.

Description

technical field [0001] The present invention relates to a high-density memory element and a manufacturing method thereof, in particular to a three-dimensional (Three-Dimensional, 3D) memory element and a manufacturing method thereof. Background technique [0002] A non-volatile memory (Non-Volatile Memory, NVM) device, such as a flash memory, has the characteristic that the information stored in the storage unit will not be lost when the power is removed. It has been widely used in solid-state mass storage applications for portable music players, mobile phones, digital cameras, etc. Three-dimensional memory elements, such as single-gate vertical-channel (SGVC) three-dimensional NAND flash memory elements, have a stacked structure of many layers, which can achieve higher storage capacity and have excellent electronic properties, such as good data storage reliability and operating speed. [0003] The fabrication of a typical single-gate vertical channel type three-dimensiona...

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Problems solved by technology

[0004] However, as the integration density of memory elements increases, the critical size and pitch of the elements shrink, making the corner effect caused by the electric field at the corners on both sides of the storage layer more and more obvious, and it is easy to The problem of causing the written memory cell to be turned on early when reading, resulting in operational errors or deterioration of electronic characteristics

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