Three-dimensional memory element and manufacturing method thereof
A technology for memory elements and manufacturing methods, applied in the field of three-dimensional memory elements and their manufacture, capable of solving problems such as deterioration of electronic characteristics, operation errors, and early opening of memory cells
Active Publication Date: 2020-06-09
MACRONIX INT CO LTD
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- Description
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- Application Information
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Problems solved by technology
[0004] However, as the integration density of memory elements increases, the critical size and pitch of the elements shrink, making the corner effect caused by the electric field at the corners on both sides of the storage layer more and more obvious, and it is easy to The problem of causing the written memory cell to be turned on early when reading, resulting in operational errors or deterioration of electronic characteristics
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[0046] The present invention provides a memory element and a manufacturing method thereof, which can solve the problem of writing / reading operation errors or deterioration of electronic characteristics due to chamfer effect at the corners on both sides of the storage layer of the known three-dimensional memory element. In order to make the embodiments of the present invention and other objects, features and advantages more comprehensible, preferred embodiments are listed below and described in detail with the attached drawings.
[0047] However, it must be noted that these specific implementation cases and methods are not intended to limit the present invention. The invention can still be implemented with other features, elements, methods and parameters. The proposal of the preferred embodiment is only used to illustrate the technical characteristics of the present invention, and is not intended to limit the patent scope of the present invention. Those with ordinary knowledge...
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Abstract
The invention discloses a three-dimensional memory element and a manufacturing method thereof. The three-dimensional memory element comprises: a base material, a ridge stack, a storage layer, a channel layer and a covering layer. The ridge stack includes a plurality of conductive strips stacked on the substrate along a first direction. The storage layer is stacked on the vertical wall of the ridge stack along the second direction, wherein the first direction and the second direction form a non-flat angle. The channel layer is stacked on the storage layer along the second direction, and includes a narrow sidewall and a long side extending along the first direction. The covering layer is stacked on the side wall along the third direction, and the third direction and the second direction form a non-square angle.
Description
technical field [0001] The present invention relates to a high-density memory element and a manufacturing method thereof, in particular to a three-dimensional (Three-Dimensional, 3D) memory element and a manufacturing method thereof. Background technique [0002] A non-volatile memory (Non-Volatile Memory, NVM) device, such as a flash memory, has the characteristic that the information stored in the storage unit will not be lost when the power is removed. It has been widely used in solid-state mass storage applications for portable music players, mobile phones, digital cameras, etc. Three-dimensional memory elements, such as single-gate vertical-channel (SGVC) three-dimensional NAND flash memory elements, have a stacked structure of many layers, which can achieve higher storage capacity and have excellent electronic properties, such as good data storage reliability and operating speed. [0003] The fabrication of a typical single-gate vertical channel type three-dimensiona...
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IPC IPC(8): H01L27/11524H01L27/11556H01L27/1157H01L27/11582H10B41/35H10B41/27H10B43/27H10B43/35
CPCH10B41/35H10B41/27H10B43/35H10B43/27
Inventor 吕函庭陈威臣
Owner MACRONIX INT CO LTD