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46 results about "Corner effect" patented technology

Triaxial test device for asphalt mixture and test method

The invention discloses a triaxial test device for an asphalt mixture, which comprises an outer air bag assembly, an inner air bag assembly, an upper press plate, a lower press plate and an air pressure console, wherein an outer air bag of the outer air bag assembly is placed on the outside of a test piece and wraps the outer lateral surface of the test piece; an inner air bag of the inner air bag assembly is installed in an inner hole of the test piece and is in close contact with the inner hole surface of the test piece; and the air pressure console can provide stable air pressure for the inner air bag assembly and the outer air bag assembly. The device has the characteristics that the control is easy, and the corner effect in the turning corner position of a traditional cubic triaxial test piece can be prevented. The triaxial test method for the asphalt mixture solves the problem that existing triaxial test devices are not suitable for the asphalt mixture, so that the strength study for the asphalt mixture is expanded from single-dimensional stress state to three-dimensional stress state; therefore, the triaxial test device and method of the asphalt mixture have important significance for studying the mechanical property of the asphalt mixture, the design of the asphalt mixture and the prevention and treatment of asphalt road surface damage under the complicated stress state.
Owner:CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY

Cross head surface induction hardening method of marine diesel engine

The invention relates to a cross head surface induction hardening method of a marine diesel engine, wherein, a notch on the cross head hardening surface of the marine diesel engine is filled by a technique block, and all the holes are sealed by moist clay; a cross head is mounted on a hardening machine; and a circular self-water spraying induction coil is mounted to be used for carrying out continuous hardening. Through filling the notch by the technique block and sealing the holes by the moist clay when hardening, the invention can reduce the sharp corner effect when hardening workpieces, thehardening speed at the sharp corner can be controlled by the numerical control technique, and the internal stress is reduced, thereby hardening cracks of the workpieces are avoided. After being treated by the induction hardening method, the hardening hardness of the cross head of the marine diesel engine is uniform and has no hardening soft belt; the hardness and the hardened layer of all the required hardening surfaces conform to the specification of drawings and technical files, and thereby, the difficult problem of hardening is solved, the quality is more stable, the hardening time of theparts is shortened, and the production efficiency is improved.
Owner:YICHANG MARINE DIESEL ENGINE

Dust remover with explosion-resistant function

The invention discloses a dust remover with an explosion-resistant function. The dust remover comprises a dust removal system, an inerting spray system, a cooling system, a coarse dust conveying system, a dust conveying system, a first fan, a chimney, dust discharging equipment, an electric control box and an explosion-resistant device. According to the dust remover, composite fire behavior sensors such as temperature sensing, smoke sensing and light sensing are arranged at different portions in the dust remover, temperature, smoke and light signals are fed back to a central control system, then the central control system makes an output response in real time and controls starting of an inerting device, inerting gas is quickly sprayed into a box body to change the explosion environment andcompletely end the burning trend, and the inerting function is achieved; meanwhile, when explosive dust in dust removal equipment is reversely exploded, explosion impact waves are transmitted from the interior of the dust removal equipment into the explosion-resistant device along a dust conveying pipe, the explosion-resistant device makes the intensity of the impact waves which enter into the internal structure of the explosion-resistant device quickly attenuated by using a gas storage tank, the critical pipe diameter and the corner effect until the waves vanish, and the explosion-resistantand anti-explosion effects are achieved.
Owner:JIANGSU TQSAFETY TECH CO LTD

MOS (Metal Oxide Semiconductor) transistor and manufacture method thereof

The invention relates to an MOS (Metal Oxide Semiconductor) transistor and a manufacture method thereof, wherein the MOS transistor comprises a semiconductor substrate, a first grid through hole, a second grid through hole, grid dielectric layers, grids, source/drain extension regions and side walls, wherein the semiconductor substrate sequentially comprises an oxidization layer, a first p-type polysilicon layer, a first n-type polysilicon layer, a second p-type polysilicon layer and a second n-type polysilicon layer; the first grid through hole is positioned in the first p-type polysilicon layer; the second grid through hole is positioned in the second p-type polysilicon layer; the grid dielectric layers are positioned on the second n-type polysilicon layer and the inner walls of the first grid through hole and the second grid through hole; the grids are positioned on the gird dielectric layers and in the first grid through hole and the second grid through hole; the source/drain extension regions are positioned in source/drain regions at two sides of the grids; the side walls are positioned at two sides of the grids and the two sides of the source/drain regions; wherein the first n-type polysilicon layer and the second n-type polysilicon layer have smooth corners after processed at high temperature. The invention improves the utilization ratio of the chip area, and solves the corner effect caused by strong corner current.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Preparation method of semiconductor field effect transistor device with three-dimensional gate-all-around structure

The present invention provides a preparation method of a semiconductor field effect transistor device with a three-dimensional gate-all-around structure. A self-support three-dimensional micro-nano functional structure is taken as a carrier, and a micro-nano processing technology is employed to prepare the semiconductor field effect transistor device with the three-dimensional gate-all-around structure. The preparation method provided by the invention specifically comprises the following steps: a first dielectric layer is prepared on the surface of the self-support three-dimensional micro-nano functional structure; a three-dimensional gate-all-around metal electrode is prepared on the first dielectric layer; a second dielectric layer is prepared on the three-dimensional gate-all-around metal electrode to ensure electrical isolation of metal leads of a source electrode and a drain electrode and a grid; an electrode contact hole is prepared through etching on the second dielectric layer; and an electrode contact block is prepared and is connected with the electrode contact hole. The transistor device prepared by the method provided by the invention has effective grid-control characteristic, is able to isotropically regulate the field effect between a source electrode and a drain electrode and restrain a wall and corner effect; and moreover, a long and wide channel and smaller drain terminal parasitic capacitance are provided in the micro-nano grade so that the electric field diffusion of the drain terminal is reduced and the performance of the transistor device may be improved.
Owner:INST OF PHYSICS - CHINESE ACAD OF SCI

MOS (Metal-oxide Semiconductor) transistor and making method thereof

The invention relates to an MOS (Metal-oxide Semiconductor) transistor and a making method thereof. The MOS transistor comprises a silicon substrate, an oxide layer arranged on the silicon substrate, top silicon arranged on the oxide layer, a first gate through hole, a second gate through hole, a gate dielectric, a gate, a source/drain electrode extension region and a source/drain electrode, wherein the top silicon consists of a first p-type single crystal silicon layer, a first n-type single crystal silicon layer, a second p-type single crystal silicon layer and a second n-type single crystal silicon layer, the first gate through hole is arranged in the center of the first p-type single crystal silicon layer, a second gate through hole is arranged in the center of the second p-type single crystal silicon layer, the gate dielectric and gate are arranged on the inner wall of the first gate through hole, the inner wall of the second gate through hole and the second n-type single crystal silicon layer, the source/drain electrode extension region is arranged in a source/drain electrode region at both sides of the gate, the source/drain electrode is arranged in the source/drain electrode region at the both sides of the gate, and corners of the first n-type single crystal silicon layer and the second n-type single crystal silicon layer are smooth. The invention enhances the utilization ratio of the area of a chip and solves the corner effect caused by strong corner current.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Test structure used for evaluating organic photo conductor (OPC) effects

The invention discloses a test structure used for evaluating organic photo conductor (OPC) effects of a complementary metal-oxide-semiconductor (CMOS) polycrystalline silicon layer. The test structure comprises 2N pieces of CMOS devices; a corresponding CMOS semi-conductor process including the OPC process is adopted for production according to prearranged sizes; the 2N pieces of the CMOS devices serve as an array which is divided into two groups according to different layout modes; one group serves as an inspection group, and the other group serves as a reference group, in terms of the CMOS devices in the inspection group; the distance between L-shaped polycrystalline silicon and active areas of monocrystalline silicon is equal to e, and in terms of the CMOS devices in the reference group, the distance between L-shaped polycrystalline silicon and active areas of monocrystalline silicon is larger than or equal to 2e; and e is the minimum distance between the L-shaped polycrystalline silicon and the active area of the monocrystalline silicon of the same CMOS device in the design rule of the CMOS semi-conductor process. The invention further discloses a test structure used for evaluating the OPC effects of active area layers of the CMOS monocrystalline silicon. The test structure can visually detect whether the OPC eliminates influences of corner round corner effects on device characteristics according to device electric characteristic data.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Polishing device for flange plate edge opening of steel structure H-shaped component

The invention discloses a polishing device for a flange plate edge opening of a steel structure H-shaped component, and relates to the technical field of steel structure machining polishing. The polishing device for the flange plate edge opening of the steel structure H-shaped component comprises driving equipment. The driving equipment comprises lower travelling wheels, lower telescopic rod pieces and lateral sliding wheels. The number of the lower travelling wheels is two and the lower travelling wheels are arranged under the driving equipment left and right. The two lower travelling wheelsare in driving connection with the driving equipment through driving rods respectively. The number of the lower telescopic rod pieces is two and the lower telescopic rod pieces are horizontally fixedto the left side and the right side of the driving equipment separately. The number of the lateral sliding wheels is two and the lateral sliding wheels are connected to the tail ends of the two lowertelescopic rod pieces in a rotating mode correspondingly. A lifting shaft is vertically fixed to the middle of the upper portion of the driving equipment. The polishing device has the beneficial effects that the rounded corner effect of the steel plate edge opening can be guaranteed, coating materials can also have rounded corners, the specified valve meeting the coating requirement is met, the coating quality of the steel structure is ensured, the problem that the coating quality of the steel plate edge opening is poor in the prior art is solved and the service life of the steel component isprolonged.
Owner:湖南金海集团有限公司

Induction quenching device used for cone sockets of brake platens and operation method

ActiveCN107312911AAvoid sharp corner effectSolve the problem that the sensing distance is difficult to controlFurnace typesIncreasing energy efficiencyHuman–machine interfaceInductor
Disclosed are an induction quenching device used for cone sockets of brake platens and an operation method. The induction quenching device comprises a quenching inductor, a revolution assembly, a cabinet body assembly and an electric control cabinet. The front end of the cabinet body assembly is fixedly connected with the quenching inductor, and the brake platens are placed at the upper end of the revolution assembly. In addition, the electric control cabinet is provided with a human-computer interface, a manual / automatic selecting knob and a heating button. A circular pipe is used for manufacturing the single-turn quenching inductor, so that the sharp corner effect is avoided during induction quenching of the cone sockets; the direction-adjustable and interval-adjustable lifting revolution tool assembly is arranged in the device, so that the problem that when induction quenching is conducted on the concave spherical surfaces of the cone sockets on arc surface wrapped with an effective induction coil, the induction interval is difficult to control is solved, the quenched layer is continuous and uniform in distribution, and accordingly the quenching quality is improved; the platens serves as the center for positioning, a height scale is used during induction quenching, and the position is precisely controlled through an index plate, so that the platens are rotationally positioned and heated in the induction quenching process, control over the quenching quality is guaranteed; and the operation method is simple, reliable and easy to carry out.
Owner:FIRST TRACTOR

Explosion resistance and prevention device for combustible and flammable liquid and gas pipelines

InactiveCN106693235AReach the effect of anti-explosion and anti-explosionFire suppressionFire rescueEngineeringCorner effect
The invention discloses an explosion resistance and prevention device for combustible and flammable liquid and gas pipelines. The explosion resistance and prevention device is used for explosion resistance and prevention of the pipelines and comprises a conical spiral pipe, a shell and a fire retardant. The conical spiral pipe is provided with an inlet and an outlet. The conical spiral pipe is arranged in the shell. The inlet and the outlet extend out of the shell. The space between the interior of the shell and the conical spiral pipe is filled with the fire retardant. According to the explosion resistance and prevention device applied to the combustible and flammable liquid and gas pipelines, when the pipelines are combusted and exploded, because of the existence of the critical pipe diameter and the corner effect, the strength of impact waves entering the conical spiral pipe can be rapidly and continuously attenuated till the impact waves disappear, and the explosion resistance and prevention effects are achieved; when the device or the conical spiral pipe is influenced by the explosion and cracks, the fire retardant can put out a fire in time; and meanwhile, after the device or the conical spiral pipe deforms or cracks, a pipeline cut-off system can be excited (triggered) through a sensing device or an interlocking device, and therefore media in the pipelines cannot leak.
Owner:NANJING TIANBEN SAFETY TECH

MOS (Metal-oxide Semiconductor) transistor and making method thereof

The invention relates to an MOS (Metal-oxide Semiconductor) transistor and a making method thereof. The MOS transistor comprises a silicon substrate, an oxide layer arranged on the silicon substrate, top silicon arranged on the oxide layer, a first gate through hole, a second gate through hole, a gate dielectric, a gate, a source / drain electrode extension region and a source / drain electrode, wherein the top silicon consists of a first p-type single crystal silicon layer, a first n-type single crystal silicon layer, a second p-type single crystal silicon layer and a second n-type single crystal silicon layer, the first gate through hole is arranged in the center of the first p-type single crystal silicon layer, a second gate through hole is arranged in the center of the second p-type single crystal silicon layer, the gate dielectric and gate are arranged on the inner wall of the first gate through hole, the inner wall of the second gate through hole and the second n-type single crystalsilicon layer, the source / drain electrode extension region is arranged in a source / drain electrode region at both sides of the gate, the source / drain electrode is arranged in the source / drain electrode region at the both sides of the gate, and corners of the first n-type single crystal silicon layer and the second n-type single crystal silicon layer are smooth. The invention enhances the utilization ratio of the area of a chip and solves the corner effect caused by strong corner current.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Induction hardening device and operation method for brake pressure plate cone socket

ActiveCN107312911BAvoid sharp corner effectSolve the problem that the sensing distance is difficult to controlFurnace typesIncreasing energy efficiencyHuman–machine interfaceInduction hardening
Disclosed are an induction quenching device used for cone sockets of brake platens and an operation method. The induction quenching device comprises a quenching inductor, a revolution assembly, a cabinet body assembly and an electric control cabinet. The front end of the cabinet body assembly is fixedly connected with the quenching inductor, and the brake platens are placed at the upper end of the revolution assembly. In addition, the electric control cabinet is provided with a human-computer interface, a manual / automatic selecting knob and a heating button. A circular pipe is used for manufacturing the single-turn quenching inductor, so that the sharp corner effect is avoided during induction quenching of the cone sockets; the direction-adjustable and interval-adjustable lifting revolution tool assembly is arranged in the device, so that the problem that when induction quenching is conducted on the concave spherical surfaces of the cone sockets on arc surface wrapped with an effective induction coil, the induction interval is difficult to control is solved, the quenched layer is continuous and uniform in distribution, and accordingly the quenching quality is improved; the platens serves as the center for positioning, a height scale is used during induction quenching, and the position is precisely controlled through an index plate, so that the platens are rotationally positioned and heated in the induction quenching process, control over the quenching quality is guaranteed; and the operation method is simple, reliable and easy to carry out.
Owner:FIRST TRACTOR

Test structure for evaluating opc effects

The invention discloses a test structure used for evaluating organic photo conductor (OPC) effects of a complementary metal-oxide-semiconductor (CMOS) polycrystalline silicon layer. The test structure comprises 2N pieces of CMOS devices; a corresponding CMOS semi-conductor process including the OPC process is adopted for production according to prearranged sizes; the 2N pieces of the CMOS devices serve as an array which is divided into two groups according to different layout modes; one group serves as an inspection group, and the other group serves as a reference group, in terms of the CMOS devices in the inspection group; the distance between L-shaped polycrystalline silicon and active areas of monocrystalline silicon is equal to e, and in terms of the CMOS devices in the reference group, the distance between L-shaped polycrystalline silicon and active areas of monocrystalline silicon is larger than or equal to 2e; and e is the minimum distance between the L-shaped polycrystalline silicon and the active area of the monocrystalline silicon of the same CMOS device in the design rule of the CMOS semi-conductor process. The invention further discloses a test structure used for evaluating the OPC effects of active area layers of the CMOS monocrystalline silicon. The test structure can visually detect whether the OPC eliminates influences of corner round corner effects on device characteristics according to device electric characteristic data.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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