IBC solar cell and its preparation method

Abstract

The invention provides an IBC (Interdigitated back contact) solar cell and a preparation method of the same, and belongs to the solar cell field. The IBC solar cell is characterized in that an ICB cell is equally divided into even number of same cell units through laser scribing lines, and the adjacent cell units are insulated from each other; printing of insulated slurry is performed along the solder strip connection positions, so as to enable a plurality of solder strips to connect P type metalized grid lines and N type metalized grid lines in the horizontal direction successively at intervals; and each of the plurality of solder strips is connected with the anode and the cathode of the adjacent cell units in the vertical direction, so that one continuous solder strip can connect each cell unit in series. Therefore, for the IBC solar cell, on the premise of not changing the cells, the assembly equipment and the technology, the effect of improving open-circuit voltage and reducing short circuit current can be obtained, so that during the assembly packaging process, the open-circuit voltage can be increased and the short circuit current can be reduced, and then the packaging loss caused by the current and the resistance can be reduced.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and more specifically relates to an IBC solar cell and a preparation method thereof. Background technique [0002] IBC solar cell: IBC (Interdigitated back contact), full back electrode contact crystalline silicon solar cell, referred to as "IBC cell", a back contact solar cell, the positive and negative metal electrodes are interdigitated on the non-light-receiving surface of the cell. [0003] N-type solar cells: The substrate of silicon wafers of solar cells is silicon wafers doped with boron. [0004] Emitter: the pn junction, a pn junction is formed on the silicon substrate through high temperature diffusion, and phosphorus is diffused on the emitter of the N-type battery. [0005] SiNx: Silicon nitride, generally forms a silicon nitride layer on the surface of the silicon wafer by PECVD (plasma enhanced vapor phase chemical deposition method), fills the dangling bonds on the surface of...

AI Technical Summary

Problems solved by technology

However, this technology requires additional laser equipment for slicing, which increases the cost of additional processes and equipment, and the laser cutting process itself will bring additional damage to the battery sheet and reduce the electrical performance of the battery.

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