Check patentability & draft patents in minutes with Patsnap Eureka AI!

Methods and apparatus to detect and correct errors in destructive read non-volatile memory

A non-volatile, memory-based technology applied in the field of errors in non-volatile memory, capable of solving problems such as no longer usable, damaged, deformed, etc.

Active Publication Date: 2018-07-17
TEXAS INSTR INC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If power is lost during a read or write-back operation, the values ​​originally stored in memory become deformed, corrupted, or no longer usable

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Methods and apparatus to detect and correct errors in destructive read non-volatile memory
  • Methods and apparatus to detect and correct errors in destructive read non-volatile memory
  • Methods and apparatus to detect and correct errors in destructive read non-volatile memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] Example methods and apparatus disclosed herein relate to correcting data symbol errors caused by power change events during read, write, and / or write-back operations in destructively read non-volatile memory Occurs when the memory for is corrupted (for example, corrupted). As used herein, the term "power change event" is defined to include any fluctuation in voltage, current, power, etc., such as a total loss of power (e.g., a mains outage), a reduction in power (e.g., a brownout), an increase in power ( For example, power surges), or other fluctuations from a constant supply of power.

[0014] During a typical digital device power-up process such as may be performed by a processor, the device is connected to a power source, allowed to stabilize, boots from non-volatile memory, and begins normal operation. If a power change event occurs during the power-on process, the device repeats the power-on process. If the contents of the non-volatile memory are not affected by ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In described examples of methods and apparatus (102) to detect and correct errors in destructive read non-volatile memory (104), the method and apparatus (102) determine, in response to stabilizing apower supply, a status signature stored in non-volatile memory (104). In examples where the status signature is not normal, the methods and apparatus (102) decode an error correction code that is encoded in the destructive read non-volatile memory (104).

Description

technical field [0001] This document relates generally to destructively read memory, and more particularly, to methods and apparatus for detecting and correcting errors in destructively read non-volatile memory. Background technique [0002] In recent years, low-power computing applications have become more valuable as the technology shrinks in size. Non-volatile memory is often used in low-power computing applications because non-volatile memory retains data when power is removed. Some types of non-volatile memory have destructive read operations that require the value being read to be written back to memory. If power is lost during a read or write-back operation, the values ​​originally stored in memory become deformed, corrupted, or no longer usable. Contents of the invention [0003] In an example of the described method and apparatus for detecting and correcting errors in a destructively read non-volatile memory, the method and apparatus determine a status flag stor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C29/42
CPCG06F11/1048G11C11/22G11C29/021G11C29/04G11C29/42G11C29/44G11C29/4401G11C2029/0407G06F11/3037G06F11/3062G06F11/3034G06F11/1068G11C16/26G11C16/30G11C29/52
Inventor 朱玉明马尼什·戈埃尔张赛
Owner TEXAS INSTR INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More