Method for producing czochralski silicon rod by utilizing nitrogen-doped mono-crystalline silicon recycled material

Abstract

The invention provides a method for producing a czochralski silicon rod by utilizing a nitrogen-doped mono-crystalline silicon recycled material. The method comprises the following steps: S11: charging; taking polycrystalline silicon, a dopant and the nitrogen-doped mono-crystalline silicon recycling material as raw materials and adding into a crucible; S12: melting and heating to melt the raw materials in the crucible. The method provided by the invention has the beneficial effects that compared with an existing nitrogen introducing nitrogen doping manner, the nitrogen-doped mono-crystallinesilicon recycling material is used as a nitrogen-doping raw material, so that the raw materials are saved and the production cost is reduced; the nitrogen-doped mono-crystalline silicon recycling material is adopted and solid-sate nitrogen is utilized; crystal formation is not influenced and the performance of a battery end is improved.

Description

technical field [0001] The invention belongs to the technical field of monocrystalline silicon recovery and utilization, and in particular relates to a method for producing Czochralski monocrystalline silicon rods by utilizing nitrogen-doped monocrystalline silicon recycled materials. Background technique [0002] In the existing production process of Czochralski monocrystalline silicon, since the whole process of producing single crystal silicon rods uses high-purity argon as a protective gas, with the increase of the diameter of silicon rods, the entire production process time is continuously extended, and the consumption is high. There is also more and more pure argon, which leads to the continuous increase of production costs. Through the improvement of the process, the existing technology reduces the production cost by feeding a mixture of argon and nitrogen. After the production of this nitrogen-doped silicon single crystal is completed, A part of nitrogen-doped monocr...

AI Technical Summary

Problems solved by technology

[0002] In the current production process of Czochralski monocrystalline silicon, because the whole process of producing single crystal silicon rods uses high-purity argon as a protective gas, with the increase of the diameter of silicon rods, the entire production process time is continuously extended, and the consumption is high. There is also more and more pure argon, which leads to the continuous increase of production cost. Through the improvement of the process, the existing technology reduces the production cost by feeding the mixed gas of argon and nitrogen. After the production of this kind of nitrogen-doped silicon single crystal is completed, A part of nitrogen-doped monocrystalline silicon waste will be produced, and the existing nitrogen-doped monocrystalline silicon waste will be sold directly at a reduced price and not recycled, resulting in a waste of resources and an increase in raw material costs