CMOS device and method for adjusting threshold of cmos device

Abstract

The invention provides a CMOS device and a method for adjusting the threshold of the CMOS device. The method includes the following steps: providing a substrate, the NMOS region in the substrate has at least a first fin and a second fin, and the PMOS region in the substrate has at least a third fin and a fourth fin; A first barrier layer and a first work function layer are sequentially formed, the first barrier layer covers the NMOS region and the PMOS region, and the first work function layer is located in the first barrier layer that does not correspond to the first fin and the second fin on the surface; sequentially form a second work function layer and a second barrier layer, the second work function layer covers the first barrier layer and the first work function layer, and the second barrier layer covers the second work function layer; sequentially forms the second A conductive layer and a second conductive layer, the first conductive layer is located on the surface of the second barrier layer not corresponding to the second fin and the third fin, and the second conductive layer covers the first conductive layer and the second barrier layer .

Description

Technical field[0001]The present invention relates to the field of semiconductor integration, and in particular, a method of adjusting a CMOS device and a threshold of the CMOS device.Background technique[0002]An existing method for adjusting the high K metal gate CMOS device threshold comprises: in the process of forming NMOS and PMOS, sequentially deposit the barrier layer and the PMOS power function layer (PMOS WFL), then remove PMOSWFL on the NMOS area. And adjust the thickness of the barrier layer on the NMOS area to adjust the NMOS threshold, then adjust the thickness of the PMOSWFL on the PMOS area to adjust the PMOS threshold, and finally deposition the NMOS power function layer (NMOS WFL).[0003]However, since in the above-mentioned existing method, both NMOS or PMOS, the thickness adjustment of the metal gate function threshold is based on the tin of the barrier layer and the PMOS WFL.xThe corrosion of the substrate, the thickness is small, the controllable resistance is po...

AI Technical Summary

Problems solved by technology

[0004] The main purpose of the present invention is to provide a CMOS device and a method for adjusting the threshold of the CMOS device, so as to solve the problem that the threshold adjustment process of the CMOS device in the prior art has poor controllability and the process damage to the channel is easy to be caused near the interface

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