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Method of forming an image sensor device

An image sensor and sensing device technology, applied in radiation control devices, semiconductor devices, electrical solid devices, etc., can solve problems such as insufficient isolation

Active Publication Date: 2021-12-14
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally, these problems can be attributed to insufficient isolation between adjacent pixels of BSI / FSI image sensor devices

Method used

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  • Method of forming an image sensor device
  • Method of forming an image sensor device
  • Method of forming an image sensor device

Examples

Experimental program
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Embodiment Construction

[0010] The following disclosure provides many different embodiments or examples for implementing different features of the provided object. Specific examples of components and configurations are described below for the purpose of conveying the disclosure in a simplified form. Of course, these are examples only and not limiting. For example, in the following description, forming a first feature over or on a second feature may include embodiments where the first feature is formed in direct contact with the second feature, and may also include embodiments where the first feature is in direct contact with the second feature. An additional feature may be formed between two features such that the first feature may not be in direct contact with the second feature. Additionally, the present disclosure may reuse component symbols and / or letters in various instances. Reuse of reference symbols is for simplicity and clarity and does not imply a relationship between the various embodime...

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Abstract

A method of forming an image sensor device on a substrate. The method includes: (a) recessing a portion of the substrate to form a first shallow trench; (b) forming a spacer layer surrounding sidewalls of the first shallow trench at least a portion; (c) further recessing the substrate by using the spacer layer as a mask to form a first deep trench extending below the first shallow trench; (d) removing all the spacer layer; (e) forming a second oxide layer on the sidewall of the first shallow trench; (f) forming a second oxide layer surrounding the first shallow trench in the substrate and (g) filling the first shallow trench with a second isolation material, thereby forming a first shallow trench isolation feature in the substrate.

Description

technical field [0001] Embodiments of the invention relate to a method of forming an image sensor device. Background technique [0002] Semiconductor image sensors are used to sense light. Complementary metal-oxide-semiconductor (CMOS) image sensors (CMOS image sensors, CIS) and charge-coupled device (CCD) sensors are commonly used in various applications, such as in digital cameras or in the phone camera app. These devices utilize an array of pixels (including photodiodes and transistors) in a substrate that can absorb radiation (eg, light) directed at the substrate and convert the sensed radiation into electrical signals. [0003] Back side illuminated (BSI) image sensor devices and front side illuminated (FSI) image sensor devices are two types of image sensor devices that have been actively developed over the years. As the size of transistor devices shrinks with each technology generation, existing BSI / FSI image sensor devices may start to suffer from cross-talk and b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14683H01L27/1463H01L27/14643H01L27/14687
Inventor 李岳川陈嘉展林荣义林稔杰李志煌陈达欣
Owner TAIWAN SEMICON MFG CO LTD