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Column repair method and device based on NAND flash memory and NAND storage device

A technology of storage device and repair method, which is applied in the field of storage, can solve problems such as broken replacement columns and inability to read and write normally, and achieve the effect of ensuring normal operation

Inactive Publication Date: 2018-10-16
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Embodiments of the present invention provide a column repair method and device based on NAND flash memory, and a NAND storage device to solve the problem in the prior art that operations such as reading and writing cannot be performed normally after the replacement column is damaged.

Method used

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  • Column repair method and device based on NAND flash memory and NAND storage device
  • Column repair method and device based on NAND flash memory and NAND storage device
  • Column repair method and device based on NAND flash memory and NAND storage device

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Embodiment 1

[0029] figure 2 It is a flow chart of a column repair method based on NAND flash memory provided by Embodiment 1 of the present invention. This embodiment is applicable to the case of column repair based on NAND flash memory and is applied to NAND storage devices. The device for performing the column repair function can be implemented by means of software and / or hardware, such as firmware of a storage device.

[0030] The method provided by Embodiment 1 of the present invention specifically includes:

[0031] S110. Detect bad columns in the storage device.

[0032] Specifically, the NAND memory is a kind of flash memory, which belongs to a non-volatile storage device. The main function of the storage device is to store programs and various data, and to complete the program or data access at high speed and automatically. The NAND storage device includes a plurality of memory units, and the operation of reading and writing data is to locate the corresponding memory unit acco...

Embodiment 2

[0051] figure 2 It is a schematic structural diagram of a column repairing device based on NAND flash memory in Embodiment 2 of the present invention, which is applied to NAND storage devices. Correspondingly, the device specifically includes: a bad column detection module 210 , a repair judgment module 220 and a repair module 230 .

[0052] Wherein, the bad column detection module 210 is used to detect the bad column in the storage device;

[0053] Repair judging module 220, used to judge whether the bad column has been repaired;

[0054] The repair module 230 is used to replace the bad column with a redundant column when the repair judging module judges that the bad column has not been repaired, and when the repair judging module judges that the bad column has been repaired, the redundant column of the repaired bad column is marked as bad redundant and replace the bad columns with new redundant columns.

[0055] Optionally, the device also includes:

[0056] The address ...

Embodiment 3

[0060] image 3 It is a schematic structural diagram of a NAND storage device in Embodiment 3 of the present invention. As shown in the figure, it includes firmware 31 and a latch 32, and the firmware 31 is connected to the latch.

[0061] Among them, the latch 32 is used to store the address of the redundant column and the replaced bad column.

[0062] Correspondingly, the firmware 31 includes the column repair device based on NAND flash memory in the above embodiment, specifically including:

[0063] A bad column detection module, configured to detect a bad column in the storage device;

[0064] A repair judging module, configured to judge whether the bad column has been repaired;

[0065] A repair module, configured to replace the bad column with a redundant column when the repair judging module judges that the bad column has not been repaired, and when the repair judging module judges that the bad column has been repaired, repair all The redundant columns of the bad col...

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PUM

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Abstract

An embodiment of the invention discloses a column repair method and device based on a NAND flash memory and a NAND storage device. The method is applied to a NAND storage device. The method comprisesthe following steps: detecting bad columns in the storage device; judging whether the bad columns have been repaired; when it is judged that there is no repair, replacing the bad columns by redundantcolumns; when it is judged that the bad columns have been repaired, marking the redundant columns for repairing bad columns as bad redundant columns, and replacing the bad columns with new redundant columns. The embodiment of the invention can solve the problem that the operation such as reading and writing cannot be carried out normally after the replacement column is broken in the prior art.

Description

technical field [0001] Embodiments of the present invention relate to memory technology, and in particular to a column repair method and device based on NAND flash memory and a NAND storage device. Background technique [0002] NAND flash memory is a kind of Flash memory, which belongs to non-volatile semiconductor memory. NAND flash includes many data blocks, and each data block is composed of many memory cells for reading and writing data. [0003] In the NAND flash chip, the wiring in the column direction is the most compact, so there is a high probability of disconnection and short-circuiting of the wiring, that is, a bad column. This requires adding an extra column in the design to replace the bad column, and storing the address information of the bad column into an array (array). In the process of power-on reading, the address information of the bad column is read from the array to the latch (latch). When performing operations such as reading and writing, the input c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/44G11C16/02
CPCG11C16/02G11C29/4401
Inventor 苏志强刘会娟李建新潘荣华
Owner GIGADEVICE SEMICON (BEIJING) INC
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