Unlock instant, AI-driven research and patent intelligence for your innovation.

Three-way mutual latching flip-flop circuit based on SET detection

A latching circuit and interlocking technology, which is applied in the direction of electrical components, electric pulse generation, pulse generation, etc., can solve problems such as deterioration of circuit timing performance, decrease in operating frequency, and increase in settling time

Inactive Publication Date: 2018-11-16
ANQING NORMAL UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the DICE structure is mainly used to strengthen the flip-flop structure to reduce the impact of single event flipping, and the single-event transient input to the data terminal is generally filtered by the C unit circuit, but when the C unit circuit is used for filtering, the flip-flop The setup time also increases, causing the timing performance of the entire circuit to deteriorate and the operating frequency to drop

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-way mutual latching flip-flop circuit based on SET detection
  • Three-way mutual latching flip-flop circuit based on SET detection
  • Three-way mutual latching flip-flop circuit based on SET detection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] A three-way interlock flip-flop circuit based on SET detection in the present invention will be further described in detail below in conjunction with the drawings and embodiments. The accompanying drawings constituting this application are used to provide a further understanding of the present invention, and the schematic embodiments of the present invention and their descriptions are used to explain the present invention, and do not constitute improper limitations to the present invention.

[0022] Depend on figure 1 — Figure 6 It can be seen that a three-way interlocking flip-flop circuit based on SET detection in this embodiment includes a clock inverter chain circuit, a D input inverter chain circuit, a set reset signal generation circuit, a master DICE latch circuit and a slave DICE latch circuit. The external clock signal CK of this embodiment is respectively input to the clock inverter chain circuit and the set reset signal generation circuit, and the external...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a three-way mutual latching flip-flop circuit based on SET detection. The three-way mutual latching flip-flop circuit is composed of a clock inverter chain circuit, a D input inverter chain circuit, a set and reset signal generation circuit, a main DICE latch circuit and a slave DICE latch circuit; the technical solution of the invention adopts the SET detection technology,and can greatly shorten the setup time of the trigger, thereby improving the timing performance of the anti-radiation trigger, improving the operating frequency of the circuit and achieving better anti-SEU characteristics.

Description

technical field [0001] The invention relates to the design of an anti-radiation circuit, in particular to a three-way interlock trigger circuit based on SET detection. Background technique [0002] With the progress of integrated circuit manufacturing process, the reduction of device size and the improvement of working speed, the influence of radiation on circuits has become more and more serious. The main impact of radiation on digital circuits is reflected in single event effect (Single Event Effect, SEE) and total dose effect (Total Ionizing Dose, TID). At that time, the single event effect has become the most important radiation effect affecting MOS devices. Single event effects are mainly divided into single event transient (Single Event Transient, SET) and single event upset (Single Event Upset, SEU). [0003] In a radiation environment, MOS integrated circuits are bombarded by high-energy charged particles. When charged particles bombard the drain region of the ori...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K3/353
CPCH03K3/353
Inventor 丁文祥蔡雪原郑江云闻军
Owner ANQING NORMAL UNIV