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A method and apparatus for epitaxy of multicolor LED array

A technology of LED array and epitaxial process, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low reliability, high cost of splicing three primary color LEDs, etc., and achieve the effect of high efficiency and low cost preparation

Active Publication Date: 2018-12-14
WUHAN UNIV OF TECH
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Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a multi-color LED array epitaxy process method and device, which are used to solve the shortcomings of phosphor-based white LEDs in terms of color rendering, operating frequency, and real-time changes in color temperature, as well as splicing three High cost and low reliability issues with primary color LEDs

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  • A method and apparatus for epitaxy of multicolor LED array
  • A method and apparatus for epitaxy of multicolor LED array
  • A method and apparatus for epitaxy of multicolor LED array

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[0021] In order to make the objectives, technical solutions and advantages of the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0022] The embodiment of the present invention provides a multi-color LED array epitaxial process method, such as figure 1 As shown, the GaN buffer layer and n-type GaN epitaxial growth are performed on the epitaxial substrate, and then the InGaN quantum well epitaxial growth is performed. During the InGaN quantum well epitaxial growth, a single or multiple femtosecond lasers are used to grow the epitaxial wafer surface Scanning irradiation, through the femtosecond laser to change the local atomic kinetic energy, adjust the local In material composition of the InGaN quantum well, so as to real...

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Abstract

The invention discloses a method and apparatus for epitaxy of multicolor LED array. The device comprises a reaction cavity for epitaxial growth of a multi-color LED array and a plurality of femtosecond laser sources, The reaction chamber is provided with a carrier tray, an epitaxial substrate for LED preparation is arranged on the carrier tray, an optical channel window is arranged on the reactionchamber, a scanning sliding device is installed on the optical channel window, and a femtosecond laser probe installed on the scanning sliding device is irradiated on the epitaxial substrate throughthe optical channel window. The multi-color LED array epitaxial process method and device of the invention are used for solving the defects of white LED based on fluorescent powder in color rendering,working frequency, real-time change of color temperature and the like, as well as the problems of high cost and low reliability caused by splicing three primary color LEDs. The invention realizes thehigh-efficiency and low-cost preparation of the multi-color LED.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a multi-color LED array epitaxial process method and device. Background technique [0002] In recent years, LED lighting and display technology has developed rapidly. For lighting applications, the current mainstream technology is to use a combination of GaN-based blue LEDs and yellow phosphors to form white light. This method has a simpler process and lower cost, but has the following shortcomings: (1) Due to the spectral range excited by the phosphor Limited, the color rendering of the above white light source is still limited; (2) Since phosphor excitation response takes a certain time, which limits the loading of higher modulation frequency signals in the light source power supply, this light source cannot be applied to higher frequency visible light communication In the system; (3) The single chip of the white light source mentioned above cannot reali...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/08
CPCH01L33/0075H01L33/06H01L33/08
Inventor 严晗李欢欢江威李鹏邱彤李鹏辉张啸
Owner WUHAN UNIV OF TECH
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