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A multi-color LED array epitaxy process method and device

A technology of LED array and epitaxial process, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low reliability and high cost of splicing three primary color LEDs, and achieve the effect of high efficiency and low cost preparation

Active Publication Date: 2020-04-21
WUHAN UNIV OF TECH
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Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a multi-color LED array epitaxy process method and device, which are used to solve the shortcomings of phosphor-based white LEDs in terms of color rendering, operating frequency, and real-time changes in color temperature, as well as splicing three High cost and low reliability issues with primary color LEDs

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  • A multi-color LED array epitaxy process method and device
  • A multi-color LED array epitaxy process method and device
  • A multi-color LED array epitaxy process method and device

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Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0022] The implementation examples of the present invention provide a multi-color LED array epitaxy process method, such as figure 1 As shown, a GaN buffer layer and n-type GaN epitaxial growth are performed on the epitaxial substrate, followed by InGaN quantum well epitaxial growth. During the InGaN quantum well epitaxial growth, a single or multiple femtosecond laser beam is used to grow the surface of the epitaxial substrate. Perform scanning irradiation, change the local atomic kinetic energy by femtosecond laser, and adjust the local In material composition of InGaN quantum wells, so as to rea...

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Abstract

The invention discloses a method and apparatus for epitaxy of multicolor LED array. The device comprises a reaction cavity for epitaxial growth of a multi-color LED array and a plurality of femtosecond laser sources, The reaction chamber is provided with a carrier tray, an epitaxial substrate for LED preparation is arranged on the carrier tray, an optical channel window is arranged on the reactionchamber, a scanning sliding device is installed on the optical channel window, and a femtosecond laser probe installed on the scanning sliding device is irradiated on the epitaxial substrate throughthe optical channel window. The multi-color LED array epitaxial process method and device of the invention are used for solving the defects of white LED based on fluorescent powder in color rendering,working frequency, real-time change of color temperature and the like, as well as the problems of high cost and low reliability caused by splicing three primary color LEDs. The invention realizes thehigh-efficiency and low-cost preparation of the multi-color LED.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a multi-color LED array epitaxy process method and device. Background technique [0002] In recent years, LED lighting and display technology has developed rapidly. For lighting applications, the current mainstream technology is to use GaN-based blue LEDs combined with yellow phosphors to form white light. limited, the color rendering of the above-mentioned white light source is still limited; (2) Since the phosphor excitation response takes a certain time, it limits the loading of higher modulation frequency signals in the light source power supply, so this light source cannot be applied to higher frequency visible light communication In the system; (3) the single chip of the above-mentioned white light source cannot realize real-time adjustment of color temperature, and its application in special lighting such as agriculture, biology, and environmen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/08
CPCH01L33/0075H01L33/06H01L33/08
Inventor 严晗李欢欢江威李鹏邱彤李鹏辉张啸
Owner WUHAN UNIV OF TECH
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