68 results about "Lead preparation" patented technology

The invention discloses a high-power GaN-based vertical structure LED with a light extraction microstructure and a preparation method thereof. According to the invention, the LED prepared through the preparation method is provided with a light-emitting surface microstructure transferred through a laser-stripping sapphire pattern substrate and complemented with patterns positioned on the surface of the laser-stripping sapphire pattern substrate; a means which has great high repetitiveness and controls the light-emitting surface microstructure is provided because the morphology of the light-emitting surface microstructure of the laser-stripping sapphire pattern substrate can be controlled through a process means; besides, nanometer-level coarsing is additionally carried out on the local area of a light-emitting surface, therefore the morphology of the light-emitting surface is further optimized; a mirror surface metallic reflection layer is changed into a nanometer-level rough grain metallic diffuse reflection layer during the LED preparation of the traditional process, so that the diffuse reflection and scattering effect is enhanced, the collocation of the reflection layer and the light-emitting surface microstructure is optimized, and the extraction efficiency of light inside the LED is furthest increased. The preparation method disclosed by the invention is simple in process and high in repeatability and can be used for large-scale industrial production.

The invention discloses a fully-inorganic quantum dot backlight LED preparation method. A prepared quantum dot backlight LED adopts inorganic perovskite quantum dots, and is novel in material and excellent in performance; and the quantum dot backlight LED adopts a fully-inorganic device structure, and light-emitting material thereof is formed through room temperature crystallization and is wrapped by SiO2 on the surface thereof, thereby helping to improve device stability.

The invention belongs to the technical field of wireless communication, and specifically discloses a micron LED array based visible light communication system and a construction method thereof. The method comprises the following steps: etching through reactive ions to obtain a p type micron LED mesa array, wherein a size of a mesa is less than 100 microns; depositing an insulated passivation layer; forming holes in the insulated layer under an area where electrodes are to be constructed; preparing p type and n type electrodes to control each LED unit of a micron LED array; integrating the micron LED array and an optical collimating lens; integrating a receiving end high-speed photoelectric detector and a focusing lens through an OFDM modulation technology so as to achieve line-of-sight communication and non-line-of-sight communication and meet indoor communication distance demand. According to the method, the LED preparation and the visible light communication system are provided, and the prepared micron LED array is high in photoelectric modulation bandwidth and can perform communication; the prepared micron LED array is high in communication speed, has the micro-displaying and lighting functions, can perform line-of-sight communication and non-line-of-sight communication, and is high in practicality.

The invention discloses an electrode lead preparation device which comprises a material box, a transport mechanism, a feeding mechanism, a shearing mechanism and a material conveying mechanism, wherein the material box is used for storing plate type electrode leads, the transport mechanism is used for transporting the electrode leads to the feeding mechanism which is used for feeding the plate type electrode leads to the shearing mechanism continuously, the shearing mechanism is used for shearing the plate type electrode leads into single electrode leads, and the material conveying mechanism is used for conveying the single electrode leads to a welding process. The electrode lead preparation device achieves efficient and reliable battery cell electrode lead preparation, production efficiency is improved, and production cost is lowered.

The invention discloses a white LED preparation method which comprises the following steps of: (1) preparing raw materials; (2) weighing and proportioning; (3) preparing fluorescent gel; (4) injecting the gel; (5) roasting; and (6) obtaining the finished product. After the roasting step is completed, the finished product of the white LED is prepared. The invention also discloses an LED prepared by using the LED preparation method. The method provided by the invention has simple manufacturing process, low cost and high product quality, and the requirement of large-scale production is satisfied. According to the LED provided by the invention, the structure is simple, the fluorescent gel has reasonable proportioning, not only the concentricity, the color rendering index and the luminous flux of a white color region is improved and discreteness is reduced, but also the service life is greatly prolonged.

The invention belongs to the illumination and display technical field, and provides an oxide-coated quantum dot LED preparation method; the method coats a metal oxide on quantum dots so as to obtain the metal oxide-coated quantum dot LED, thus effectively separating quantum dots of the LED from the outer side, preventing quantum dot oxidation, improving quantum dot thermal stability and light/electroluminescent efficiency, and improving the LED reliability and service life. The preparation method is simple in process, low in cost, and can easily realize large scale production.

The invention discloses a preparation method of a trench MOSFET integrating a Schottky diode. The method comprises the steps of first, trench construction; second, conductive region preparation; third, conductive trench arrangement; fourth, Schottky structure activation; and fifth, conductive lead preparation. According to the embodiment, the structure of a power MOSFET device integrating the Schottky diode function is provided; and even though the Schottky diode is integrated in the MOSFET structure, through optimization of structural design and layout design, the manufacturing difficulty inpractical production is lowered, the yield of the device is improved, cost is lowered, and device performance is improved.

The invention belongs to the technical field of nano-pillar LED preparation, and discloses a nano-pillar LED grown on a strontium tantalum lanthanum aluminate substrate and a preparation method thereof. The nano-pillar LED grown on a strontium tantalum lanthanum aluminate substrate comprises a strontium tantalum lanthanum aluminate substrate, an AlN nucleation layer grown on the strontium tantalum lanthanum aluminate substrate, a GaN nano-pillar template grown on the AlN nucleation layer, an AlN/GaN super lattice layer grown on the GaN nano-pillar template, a non-doped GaN layer grown on the AlN/GaN super lattice layer, an n-type doped GaN layer grown on the non-doped GaN layer, an InGaN/GaN quantum well grown on the n-type doped GaN layer, and a p-type doped GaN layer grown on the InGaN/GaN quantum well. The substrate material is of low cost. A nano-pillar array prepared is size-controllable and of uniform orientation. The obtained nano-pillar LED has low defect density and excellent electrical and optical properties.

The embodiment of the invention provides a purple LED (light-emitting diode) preparation method, a purple LED and a chip. The method comprises the following steps of growing a gallium nitride buffer layer on a sapphire substrate; annealing the gallium nitride buffer layer to form at least one crystal nucleus island; transversely growing a gallium nitride layer based on the crystal nucleus islands until the crystal nucleus islands are connected with one another to form an integrated crystal nucleus island; growing an undoped gallium nitride layer on the integrated crystal nucleus island; growing an N-type doped gallium nitride layer on the undoped gallium nitride layer; growing at least one quantum well structure on the N-type doped gallium nitride layer according to a first cycle number, wherein each quantum well structure is formed by generating a quantum well layer on a superlattice structure grown according to a second cycle number, and the superlattice structures are used as barrier layers of the quantum well structures; growing a P-type doped gallium nitride layer on an active area of a finally generated quantum well structure. According to the purple LED preparation method, the purple LED and the chip, the charge-carrier recombination probability, the luminous efficiency and the antistatic performance of the purple LED can be improved.

The invention discloses a method for preparing a white light LED, which is suitable for preparing the white light LED connected with a lead frame in batch. The invention adopts the technical scheme that: the method comprises the following steps of: fixation: fixing a blue light LED chip on a chip area, providing two through holes corresponding to positive and negative electrodes of a substrate on the lateral surface of the substrate, and arranging a resin frame on the substrate; silk screen arrangement: forming the positive and negative electrodes of the substrate on the upper surface, extending the positive and negative electrodes to the inner surfaces of the through holes respectively, placing a silk screen at a position parallel to the surface of a chip, and making reserved holes of the silk screen correspond to patterns of the positive and negative electrodes of the chip; printing of fluorescent powder: printing the fluorescent powder on the surface of the chip by using a silk-screen printing process; removal of the silk screen and baking of the fluorescent powder: removing the silk screen, baking and curing the fluorescent powder, making the cured fluorescent powder coated on the surface of the chip, and exposing the positive and negative electrodes of the chip; lead bonding: connecting the positive electrodes of the chip and the substrate, and connecting the negative electrodes of the chip and the substrate; silica gel filling: filling silica gel into the resin frame, and baking and curing the silica gel to finish the preparation. The method is applied to the field of LED preparation.

The invention discloses LED bracket preparation technology, and particularly relates to a preparation process and related material technology. The LED preparation technology according to the inventioncomprises the steps of applying liquid imprint glue on a printed circuit board (PCB) with arranged circuit or a pin, and obtaining a large-area manufactured LED bracket at an original position through an imprint template. The imprint template is a flexible composite die. Through function of an external electric field or vacuum, a template contacts with a substrate, thereby realizing patterning ofliquid imprint glue. After illumination, the liquid imprint glue is solidified, and furthermore demolding developing is performed. The liquid imprint glue is composed of epoxy resin, acrylic acid ester, a filling material, a pigment, a photoinitiator, a curing agent, etc. The obtained LED bracket can be further cut for use or directly used in a large-area manner.

The invention relates to a vacuum system used in semiconductor and LED preparation processes and particularly relates to a vacuum system for efficiently pumping gases with small molecular weights. The vacuum system comprises a controller, a first-grade vacuum pump and a plurality of second-grade vacuum pumps, wherein the first-stage vacuum pump is connected with the second-stage vacuum pumps; both the first-stage vacuum pump and the second-stage vacuum pumps are connected with the controller; and the first-stage vacuum pump is connected with a process vacuum chamber. The plurality of second-stage vacuum pumps are connected with the first-stage vacuum pump after being connected in parallel. By using the vacuum system, more gases with low molecular weights can be carried within unit time, and the backflow of the gases with low molecular weights can be reduced, so that the gases with low molecular weights are efficiently pumped.

The invention discloses a matte pencil lead and a preparation method thereof and belongs to the field of matte pencil lead preparation. The invention discloses the matte pencil lead for a first time,and the matte pencil lead comprises the following components: flake graphite, amorphous graphite, clay, carbon black, talcum powder, an adhesive and water. The invention further discloses a method forpreparing the matte pencil lead. The method comprises the following steps: mixing and blending the components, kneading the mixture, grinding with three rollers, kneading the ground material for a second time, carrying out lead extrusion, drying, sintering, and soaking into oil, thereby obtaining the matte pencil lead. On the basis of a conventional graphite pencil lead, the amount of graphite isreduced, and proper amounts of carbon black and talcum powder are added, so that a glare phenomenon is effectively reduced, and the matte pencil lead has the smoothness and concentration of the conventional graphite pencil lead, and meanwhile has a color overlapping effect without glare. When a picture is drawn with the matte pencil lead, the drawing smoothness is ensured, the glare phenomenon iseffectively reduced, the picture has remarkable layering, and the picture quality and the drawing artistic conception can be improved.

Disclosed is a high-luminance LED preparation process. The preparation process comprises the steps of performing epitaxial growth of a buffer layer, a non-doped GaN layer, an N type GaN layer, a stress release layer, a multi-quantum-well layer, a P type electron barrier layer and a P type GaN layer on a substrate in sequence, wherein the N type GaN layer is divided into a highly doped N type GaN layer and a lightly doped N type GaN layer; the Si concentration of the highly doped N type GaN layer is higher than the Si concentration of the lightly doped N type GaN layer; an AlGaN layer is inserted between the highly doped N type GaN layer and the lightly doped N type GaN layer; the highly doped N type GaN layer adopts a stacked structure which consists of a doped nGaN layer and a non-doped uGaN layer; the nGaN layer is in contact with the non-doped GaN layer; and the uGaN layer is in contact with the nGaN layer. By dividing the N type GaN layer into the highly doped N type GaN layer andthe lightly doped N type GaN layer, relatively high electron concentration can be accumulated in the highly doped N type GaN layer, so that ions can jump from the highly doped N type GaN layer to thelightly doped N type GaN layer, and then jump to the multi-quantum-well layer grown subsequently to be compounded with holes in the multi-quantum-well layer to give out light, so that the light emitting efficiency of the multi-quantum-well layer is improved, and the luminous intensity of the LED is further improved.

The invention provides a light-emitting diode and a manufacturing method thereof. The light-emitting diode includes a growth substrate, a light-emitting epitaxy structure, a current spreading layer, an N electrode, a P electrode and a transparent insulation structure; an N electrode pad preparation area and an N electrode lead preparation area are formed on the light-emitting epitaxy structure; the current spreading layer is provided with a plurality of open holes which are distributed at intervals and are corresponding to the P electrode lead; the N electrode include an N electrode pad and an N electrode lead; the P electrode includes a P electrode pad and a P electrode lead; the transparent insulation structure includes a first insulation layer which is combined at a part of an interface between the N electrode pad preparation area and the N electrode lead preparation area, a second insulation layer which is combined between the N electrode lead and the N electrode lead preparation area in the form of a plurality of insulation layer segments, and a third insulation layer which is combined between a P type layer and the current spreading layer, and is located below the P electrode, and is shaped to be corresponding to the P electrode. With the light-emitting diode and the manufacturing method thereof, the current of the light-emitting diode can be distributed more uniformly, and luminous efficiency can be effectively improved, and brightness can be improved.

The invention provides an LED preparation method and an LED. The LED preparation method provided by the invention comprises the steps of forming an AlN layer on a substrate; growing an undoped GaN layer and an N-type GaN layer on the AlN layer in sequence; growing an electron diffusion layer on the N-type GaN layer; growing a stress release layer on the electron diffusion layer; growing a light-emitting layer on the stress release layer; and growing a P-type GaN layer on the light-emitting layer. According to the LED preparation method provided by the invention, the electron and hole recombination probability is relatively high; and the light-emitting efficiency of the LED is relatively high.

The invention discloses a method for achieving filter liquor circulation, recovering waste lead plaster through a wet process and preparing high-purity red lead and relates to the technical field of waste lead-acid cell lead plaster wet process recovery and red lead preparation. The method comprises the following steps that 1, organic acid salt, organic acid and reducer mixed liquor are utilized for leaching out the waste lead plaster, and after solid and liquid are separated, lixivium is obtained; 2, a carbonate solution is added to the lixivium, the reaction pH is regulated, and solid and liquid separating is carried out to obtain lead carbonate sediment and filter liquor; and 3, lead carbonate is roasted in the aerobic atmosphere, and the high-purity red lead with low impurity content is prepared. The prepared red lead product is high in purity and low in impurity content, the content of main impurities Ba and Fe is smaller than 10 mg/kg, the content of Cu, Zn and Al impurity elements is smaller than 1 mg/kg, the filter liquor can achieve closed circulation of organic acid radical ligand in a leaching system, and the use efficiency of a leaching agent is improved remarkably.

The invention relates to a method for preparing a high-heat dissipation LED substrate through abandoned straight-chain silica gel modification and belongs to the technical field of LED preparation. The method comprises the steps of crushing abandoned straight-chain silicone rubber and polyethylene plastic into mixed blocks; mixing the mixed blocks with a dissolved solution prepared from the substances of cyclohexane and the like to obtain mixed and modified sol for later use; carrying out ball-milling on the substances of Al2O3, brass powder and the like, mixing and stirring the product and polyvinyl alcohol, and carrying out dry pressing and drying to obtain a dried and dry-pressed blank; and coating the mixed and modified sol on the dried and dry-pressed blank and carrying out calcination to prepare the high-heat dissipation LED substrate. The prepared LED substrate is good in heat dissipation performance; the heat transfer coefficient is 2.0-3.0W/m.k; the thermal expansion coefficient is low; and the performance of a device is effectively improved.