High-luminance LED preparation process

A preparation process and high-brightness technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low LED brightness, and achieve the effects of improving luminous intensity, reducing warpage, and reducing stress

Active Publication Date: 2018-03-13
CHUZHOU HKC OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the above-mentioned technical problems and provide a h...

Method used

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Embodiment Construction

[0013] In order to make the purpose, technical solution and advantages of the present invention clearer, the implementation manners of the present invention will be further described in detail below.

[0014] The embodiment of the present invention provides a high-brightness LED preparation process, using metal organic chemical vapor deposition (English: Metal organic Chemical Vapor Deposition, abbreviated: MOCVD) technology to grow epitaxial wafers, using trimethylgallium or triethylgallium as Gallium source, high-purity ammonia (NH3) as nitrogen source, trimethylindium as indium source, trimethylaluminum as aluminum source, silane as N-type dopant, and magnesocene as P-type dopant. This growing method includes:

[0015] Step (1): epitaxially growing a buffer layer on the substrate.

[0016] In this embodiment, the substrate may be a sapphire substrate.

[0017] Optionally, the substrate may be a large-sized substrate with a size greater than 2 inches, such as a 4-inch subs...

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Abstract

Disclosed is a high-luminance LED preparation process. The preparation process comprises the steps of performing epitaxial growth of a buffer layer, a non-doped GaN layer, an N type GaN layer, a stress release layer, a multi-quantum-well layer, a P type electron barrier layer and a P type GaN layer on a substrate in sequence, wherein the N type GaN layer is divided into a highly doped N type GaN layer and a lightly doped N type GaN layer; the Si concentration of the highly doped N type GaN layer is higher than the Si concentration of the lightly doped N type GaN layer; an AlGaN layer is inserted between the highly doped N type GaN layer and the lightly doped N type GaN layer; the highly doped N type GaN layer adopts a stacked structure which consists of a doped nGaN layer and a non-doped uGaN layer; the nGaN layer is in contact with the non-doped GaN layer; and the uGaN layer is in contact with the nGaN layer. By dividing the N type GaN layer into the highly doped N type GaN layer andthe lightly doped N type GaN layer, relatively high electron concentration can be accumulated in the highly doped N type GaN layer, so that ions can jump from the highly doped N type GaN layer to thelightly doped N type GaN layer, and then jump to the multi-quantum-well layer grown subsequently to be compounded with holes in the multi-quantum-well layer to give out light, so that the light emitting efficiency of the multi-quantum-well layer is improved, and the luminous intensity of the LED is further improved.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to a high-brightness LED preparation process. Background technique [0002] Light Emitting Diodes (LED for short) have the advantages of small size, colorful colors, and long service life. , toys and other fields. Group III nitrides represented by GaN are wide-bandgap semiconductors with direct band gaps, which have the advantages of high thermal conductivity, high luminous efficiency, stable physical and chemical properties, and the ability to achieve P-type or N-type doping, and the multi-element alloys of GaN The quantum well structure composed of InGaN and GaN can cover the entire visible light region, and has a high internal quantum efficiency, so GaN is an ideal material for making LEDs. [0003] GaN-based LED epitaxial wafers are usually grown on a sapphire substrate, and the buffer layer, undoped GaN layer, N-type GaN layer, stress release layer, multi-quantum well layer, P-t...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/02H01L33/12
CPCH01L33/007H01L33/025H01L33/12
Inventor 白航空
Owner CHUZHOU HKC OPTOELECTRONICS TECH CO LTD
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