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Fully-inorganic quantum dot backlight LED preparation method

A quantum dot and inorganic technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of lack of all-inorganic perovskite materials and poor stability of all-inorganic perovskite materials, achieve novel materials and improve device stability , excellent performance

Inactive Publication Date: 2017-09-22
NANJING UNIV OF SCI & TECH
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  • Application Information

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Problems solved by technology

[0003] However, at present, the industrialization of all-inorganic perovskite materials has encountered two important bottlenecks. One is the lack of a simple process to prepare high-quality all-inorganic perovskite materials, and the other is how to solve the poor stability of all-inorganic perovskite materials. The problem

Method used

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  • Fully-inorganic quantum dot backlight LED preparation method
  • Fully-inorganic quantum dot backlight LED preparation method
  • Fully-inorganic quantum dot backlight LED preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0033] The ultra-stable Cs described in this example 4 PbX 6 / SiO 2 The all-inorganic quantum dot backlight LED of perovskite material, taking PDMS glue as an example, the specific steps are as follows:

[0034] 1) Add 20 mL of toluene, 1 mL of oleic acid, 1 mL of oleylamine, and 200 μL of triethoxysilane (APTES) into a 100 mL single-neck flask, and stir in room temperature air at a stirring speed of 800 r / min to obtain a reaction solvent. And the metal halide PbBr 2 Dissolve it in DMSO at a molar ratio of 1:1 to CsBr, and ultrasonically until it is completely dissolved to form a perovskite precursor solution.

[0035] 2) Take 1mL of the precursor solution and quickly inject it into the mixed solution, continue to stir and react for 12 hours, after the reaction is completed, the precipitate is purified by centrifugation and dried in vacuum to obtain a surface coated with SiO 2 Cs 4 PbBr 6 powder.

[0036] 3) Wrap the obtained surface with SiO 2 Cs 4 PbBr 6 Mix the powder with PDMS gl...

Embodiment 2

[0040] Similar to Example 1, the difference is that the PDMS glue in step 3) of Example 1 is changed to UV glue, and other conditions remain the same.

Embodiment 3

[0042] Similar to Example 1, the difference is that the PDMS glue in step 3) of Example 1 is changed to PS glue, and other conditions remain the same.

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Abstract

The invention discloses a fully-inorganic quantum dot backlight LED preparation method. A prepared quantum dot backlight LED adopts inorganic perovskite quantum dots, and is novel in material and excellent in performance; and the quantum dot backlight LED adopts a fully-inorganic device structure, and light-emitting material thereof is formed through room temperature crystallization and is wrapped by SiO2 on the surface thereof, thereby helping to improve device stability.

Description

Technical field [0001] The invention belongs to the field of quantum dot photoluminescence devices, and relates to a method for preparing an all-inorganic quantum dot backlight LED. Background technique [0002] Light-emitting diodes (LEDs) are widely used in the fields of display, lighting and backlighting. Because of their excellent luminous efficiency and device performance, they have gradually replaced traditional fluorescent lamps as a new generation of light sources. Organic light-emitting diodes (OLED) and quantum dot light-emitting diodes (QLED) are considered to be the two main directions for future LED development. The unique quantum effect endows the semiconductor quantum dot material with adjustable luminous wavelength, narrow half-height of the emission spectrum peak, high quantum efficiency and other characteristics. It has good application prospects in the fields of light-emitting diodes, displays, and solar cells. From the first report of quantum dot light-emitti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/26H01L33/00H01L27/15
CPCH01L27/15H01L33/005H01L33/06H01L33/26
Inventor 陈嘉伟宋继中洪道彪曾海波刘舒婷
Owner NANJING UNIV OF SCI & TECH
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