Preparation method of trench MOSFET integrating Schottky diode

A technology of Schottky diodes and trenches, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of asymmetric sidewall technology, which is difficult to realize, large forward conduction loss recovery current, and low product yield. , to achieve the effect of improving device performance, improving yield level, and reducing manufacturing difficulty
CN109904152AInactive Publication Date: 2019-06-18JIANGSU HAIDONG SEMICON TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
JIANGSU HAIDONG SEMICON TECH CO LTD
Publication Date
2019-06-18
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a preparation method of a trench MOSFET integrating a Schottky diode. The method comprises the steps of first, trench construction; second, conductive region preparation; third, conductive trench arrangement; fourth, Schottky structure activation; and fifth, conductive lead preparation. According to the embodiment, the structure of a power MOSFET device integrating the Schottky diode function is provided; and even though the Schottky diode is integrated in the MOSFET structure, through optimization of structural design and layout design, the manufacturing difficulty inpractical production is lowered, the yield of the device is improved, cost is lowered, and device performance is improved.
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Description

technical field

[0001] The invention relates to the technical field of Schottky diode preparation, in particular to a preparation method of a trench MOSFET integrating a Schottky diode. Background technique

[0002] The Schottky diode is named after its inventor, Dr. Schottky, and SBD is the abbreviation of Schottky Barrier Diode (Schottky Barrier Diode, abbreviated as SBD). SBD is not made by using the principle of contacting P-type semiconductor and N-type semiconductor to form PN junction, but using the principle of metal-semiconductor junction formed by contacting metal and semiconductor. Therefore, SBD is also called metal-semiconductor (contact) diode or surface barrier diode, which is a kind of hot carrier diode. P-N junction diodes have undesirable characteristics in operation: huge forward conduction losses, charge storage between bulk-epitaxial junction in forward configuration, when power MOSFET is switched from forward bias to reverse bias Excessive storage of ...

Claims

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