White light LED preparation method and white light LED device

A technology of LED devices and white light, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of large difference in refractive index, enhanced total reflection effect at the interface, unfavorable LED light output, etc., achieve simple process and improve light extraction efficiency Effect

Inactive Publication Date: 2019-06-04
EZHOU INST OF IND TECH HUAZHONG UNIV OF SCI & TECH +1
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in fluorescent glass, the difference in refractive index between the air and the glass interface is large, resulting in an enhanced total reflection effect at the interface, which is not conducive to the light output of LEDs.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • White light LED preparation method and white light LED device
  • White light LED preparation method and white light LED device
  • White light LED preparation method and white light LED device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The sapphire sheet is chemically mechanically polished to a thickness of 200 μm, the surface of the sapphire is cut using a laser, mask preparation, etching, and splitting are performed to obtain a sapphire sheet 4 with a moth-eye microstructure array 5 on the upper surface.

[0029] The red phosphor CaAlSN 3 :Eu 2+ , green phosphor Ba 2 MgSi 2 o 7 :Eu 2+ Mix with glass powder according to the ratio of 1:2:7, then pour into organic solvent and stir well.

[0030] A phosphor layer 3 was prepared on the lower surface of the sapphire sheet by screen printing, and sintered in an air furnace at 600°C for 30 minutes to obtain a phosphor glass with a moth-eye microstructure array.

[0031] The ultraviolet LED chip 1 with a light emission wavelength of 395nm is eutectic in the middle of a 3.2mm*3.2mm AlN ceramic substrate, and silica gel 2 is coated on the top of the chip and the ceramic substrate, and a fluorescent glass with a thickness of 20μm is placed on the silica ge...

Embodiment 2

[0033] The sapphire sheet is chemically mechanically polished to a thickness of 200 μm, the surface of the sapphire is cut using a laser, mask preparation, etching, and slivers are performed to obtain a sapphire sheet with a moth-eye microstructure array on the upper surface.

[0034] The red phosphor CaAlSN 3 :Eu 2+ , green phosphor Ba 2 MgSi 2 o 7 :Eu 2+ Mix with glass powder according to the ratio of 1:2:7, then pour into organic solvent and stir well.

[0035] A phosphor layer was prepared on the lower surface of the sapphire sheet by screen printing, and sintered in an air furnace at 600°C for 30 minutes to obtain a phosphor glass with a moth-eye microstructure array.

[0036] Put the ultraviolet LED chip eutectic with a light emission wavelength of 395nm in the middle of a 3.2mm*3.2mm AlN ceramic substrate, coat silica gel on the top of the chip and the ceramic substrate, place a fluorescent glass with a thickness of 48μm on top of the silica gel, and vacuum at 120°...

Embodiment 3

[0038] The sapphire sheet is chemically mechanically polished to a thickness of 200 μm, the surface of the sapphire is cut using a laser, mask preparation, etching, and slivers are performed to obtain a sapphire sheet with a moth-eye microstructure array on the upper surface.

[0039] The red phosphor CaAlSN 3 :Eu 2+ , green phosphor Ba 2 MgSi 2 o 7 :Eu 2+ Mix with glass powder according to the ratio of 1:2:7, then pour into organic solvent and stir well.

[0040] A phosphor layer was prepared on the lower surface of the sapphire sheet by screen printing, and sintered in an air furnace at 600°C for 30 minutes to obtain a phosphor glass with a moth-eye microstructure array.

[0041] Put the ultraviolet LED chip eutectic with a light emission wavelength of 395nm in the middle of the 3.2mm*3.2mm AlN ceramic substrate, coat the silica gel on the chip and the ceramic substrate, place the fluorescent glass with a thickness of 84μm on the silica gel, and vacuum at 120℃ Conditio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
heightaaaaaaaaaa
Login to view more

Abstract

The invention provides a white light LED preparation method, which comprises the steps of: performing chemical-mechanical polishing to obtain a sapphire sheet, cutting the surface of the sapphire by using laser, and performing mask preparation, etching and sheet splitting to obtain a sapphire sheet having a moth-eye microstructure array on the upper surface; preparing a fluorescent powder layer, and sintering the fluorescent powder layer in an air furnace to obtain a fluorescent glass having a moth-eye microstructure array; coating a silica gel on a chip and a ceramic substrate; arranging thefluorescent glass having the moth-eye microstructure array on the silica gel; and curing the fluorescent glass and the silica gel to obtain a white light LED device. The invention further provides thewhite light LED device prepared by adopting the preparation method. Compared with the prior art, the white light LED device manufacturing method provided by the invention has simple process and is suitable for industrial production; and the white light LED device overcomes the problem of a material that the organic polymer turns yellow under ultraviolet irradiation, and improves the light extraction efficiency of the white light LED.

Description

technical field [0001] The invention relates to the technical field of LED packaging, and more specifically, to a preparation method of a white light LED and a white light LED device. Background technique [0002] In recent years, light-emitting diodes (LEDs), solid-state lighting sources, have attracted widespread attention from all over the world due to their advantages such as long service life, high efficiency, energy saving, environmental protection and pollution-free. At present, the main way to realize white light LED is to combine LED chip and phosphor powder, and use LED chip to excite phosphor powder to mix to form white light. There are two specific ways: one is to use blue LEDs to excite phosphors that emit yellow light, and the other is to use near-ultraviolet LEDs to excite red, green and blue phosphors. Since the ultraviolet-excited white LED can achieve a wide emission spectrum, and the emitted visible light spectrum is only composed of phosphor powder conve...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/50H01L33/58H01L33/56
Inventor 王昊彭洋梁仁瓅牟运许琳琳戴江南陈长清
Owner EZHOU INST OF IND TECH HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap