Light-emitting diode and manufacturing method thereof

Abstract

The invention provides a light-emitting diode and a manufacturing method thereof. The light-emitting diode includes a growth substrate, a light-emitting epitaxy structure, a current spreading layer, an N electrode, a P electrode and a transparent insulation structure; an N electrode pad preparation area and an N electrode lead preparation area are formed on the light-emitting epitaxy structure; the current spreading layer is provided with a plurality of open holes which are distributed at intervals and are corresponding to the P electrode lead; the N electrode include an N electrode pad and an N electrode lead; the P electrode includes a P electrode pad and a P electrode lead; the transparent insulation structure includes a first insulation layer which is combined at a part of an interface between the N electrode pad preparation area and the N electrode lead preparation area, a second insulation layer which is combined between the N electrode lead and the N electrode lead preparation area in the form of a plurality of insulation layer segments, and a third insulation layer which is combined between a P type layer and the current spreading layer, and is located below the P electrode, and is shaped to be corresponding to the P electrode. With the light-emitting diode and the manufacturing method thereof, the current of the light-emitting diode can be distributed more uniformly, and luminous efficiency can be effectively improved, and brightness can be improved.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting, in particular to a light emitting diode and a manufacturing method thereof. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors, and its cor...

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Problems solved by technology

[0007] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a light emitting diode and its manufacturing method, which are used to solve the problems of low light extraction efficiency and unreasonable current distribution of the light emitting diode in the prior art.

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