Rapid high-precision low-temperature drift strong pull-down current generation circuit
A technology for generating circuits and pulling currents, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve problems such as the inability to generate high-precision low-temperature drift and strong pull-down current, the increase of parasitic capacitance, and the impact on the response speed of the drive line.
Active Publication Date: 2019-01-15
GIANTEC SEMICON LTD
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Problems solved by technology
When the driving current gradually increases, the parasitic capacitance will increase due to the increase of the driving tube, which will affect the response speed of the driving circuit.
Therefore, when the pull-down drive current reaches a strong drive in the order of 100 milliamps, in order to meet the requirements of the response time, the switching tube driving method is generally adopted to obtain a fast-responding strong pull-down current, which sacrifices the performance of driving the pull-down current. The driving pull-down current varies greatly with the process and temperature, and it cannot generate a strong pull-down current with high precision and low temperature drift, and cannot meet the application requirements of high-performance strong pull-down current.
Method used
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[0033] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments, but the scope of the present invention is not limited in any way.
[0034] figure 1 Shown is the circuit structure of the present invention, including: BGR (Band Gap Reference Bias) module, current control voltage generation module, mirror bias voltage module, pull-down current generation module, and shutdown pull-down current module;
[0035] The BGR module is a low-temperature drift and high-precision current source, including the BGR circuit. Both ends of the module are connected to the positive power supply VDD of the module and the negative power supply VSS of the module. The main function of this module is to generate a high-precision low-temperature drift bias current Iin; When the CLK input signal chan...
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The invention discloses a rapid high-precision low-temperature drift strong pull-down current generation circuit applied to a motor drive chip. The circuit comprises a BGR module, a current control and voltage generation module, a mirror bias voltage module, a pull-down current generation module and a turn-off pull-down current module; the BGR module generates a high-precision low-temperature drift bias current Iin; the current control and voltage generation module generates corresponding bias voltages VB1 and VB2 according to a magnitude of the bias current Iin; the mirror bias voltage modulemirrors and follows the VB2 to generate an output bias voltage VB3; the pull-down current generation module generates a pull-down drive current according to the bias voltage VB3; and the turn-off pull-down current module turns off the output pull-down current when a high level is input via a clock signal CLK. With the structure, the advantage that a current mirror can mirror a low temperature coefficient high-precision current well is applied to a strong pull-down current design of the motor drive chip; and in addition, in order to meet the requirement on rapid response, the advantage of rapid response of a switching tube is further integrated.
Description
technical field [0001] The invention relates to a fast high-precision low-temperature drift strong pull-down current generation circuit applied in a motor drive chip, belonging to the technical field of analog integrated circuits. Background technique [0002] In traditional motor drive chips, the general low current drive circuit can be generated by a current mirror to obtain a pull-down drive current with high precision and low temperature drift. When the driving current gradually increases, the parasitic capacitance of the driving tube will increase due to the increase of the driving tube, which will affect the response speed of the driving circuit. Therefore, when the pull-down drive current reaches a strong drive in the order of 100 milliamperes, in order to meet the requirements of response time, the switching tube driving method is generally adopted to obtain a fast-response strong pull-down current, which sacrifices the performance of driving the pull-down current. ...
Claims
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Login to View More IPC IPC(8): G05F1/567
CPCG05F1/567
Inventor 李娟韦枫汤浩
Owner GIANTEC SEMICON LTD