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Self-driven photoelectric detector based on ZnO nanorod/Si heterojunction and preparation method thereof

A photodetector and nanorod technology, applied in the field of photodetection, can solve the problems of unfavorable carrier transport, affecting the performance of the photodetector, unfavorable photodetector performance, etc., achieving good cycle repeatability, remarkable photoresponse performance, Simple preparation method

Active Publication Date: 2019-02-19
CHINA UNIV OF PETROLEUM (EAST CHINA)
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Problems solved by technology

In addition, ZnO nanorod arrays with excellent light absorption properties have received more and more attention because the planar thin film structure will bring unnecessary light reflection, which is not conducive to the improvement of photodetector performance.
[Journal of Materials Chemistry C, 2018, 6, 7077-7084] However, there are many defects in the ZnO nanorod array prepared by the hydrothermal method, which is not conducive to the transport of carriers; and the hydrogen annealing treatment of ZnO can effectively change the ZnO Defect species in nanorod arrays for enhanced photodetector performance
[Thin Solid Films,2017,628:101-106] Nevertheless, the hydrogen annealing treatment will introduce many surface defects at the same time, which will affect the further improvement of the photodetector performance

Method used

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  • Self-driven photoelectric detector based on ZnO nanorod/Si heterojunction and preparation method thereof
  • Self-driven photoelectric detector based on ZnO nanorod/Si heterojunction and preparation method thereof
  • Self-driven photoelectric detector based on ZnO nanorod/Si heterojunction and preparation method thereof

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Embodiment Construction

[0029] The present invention uses magnetron sputtering, hydrothermal method, hydrogen annealing treatment and other methods to prepare ZnO nanorod thin film layer with ZIF-8 surface modified on Si semiconductor substrate, deposit metal Pd front electrode by DC magnetron sputtering technology and Press metal In electrodes and connect metal wires to form devices. When exposed to light conditions, due to the photoelectric effect and the existence of the built-in electric field, the device can exhibit obvious response performance to light when the applied voltage is 0 volts.

[0030] The present invention will be described in detail below in conjunction with the embodiments and accompanying drawings.

[0031] The invention is a self-driven photodetector based on ZnO nanorod / Si heterojunction, which includes a ZnO nanorod thin film layer with ZIF-8 modified on the surface and a Si semiconductor substrate, and the Si substrate is used as the ZnO with ZIF-8 modified on the surface. ...

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Abstract

The invention belongs to the technical field of photodetection and particularly relates to a self-driven photoelectric detector, comprising a metal In point electrode, a metal Pd front electrode, a ZnO nanorod film layer with ZIF-8 modified surface, a Si monocrystal substrate and a metal In back electrode. The ZnO nanorod film layer with ZIF-8 modified surface is prepared by means of magnetron sputtering, hydrothermal process, hydrogen annealing treatment and the like. Test results show that the prepared film device has good self-driven photodetection performance and has the advantages of stable performance and the like.

Description

technical field [0001] The invention belongs to the technical field of light detection, and in particular relates to a self-driven photodetector and a preparation method thereof. Background technique [0002] A photodetector is an electronic device that converts light signals into electrical signals. Photodetectors have been widely used in biological imaging, non-destructive testing, communications, environmental monitoring and other fields. However, most of the photodetectors reported so far need to be powered, which seriously hinders the application of photodetectors in real life. [Small,2017,13(45):1701687] Therefore, it is of great significance to develop self-driven photodetectors. [0003] Zinc oxide (ZnO) is a non-toxic semiconductor with a direct band gap. Its crystallization temperature is low, it is easy to etch, it is easy to process, and it has high chemical stability and high temperature resistance, making it used in light-emitting diodes, lasers , photodetec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0328H01L31/10H01L31/18
CPCH01L31/0328H01L31/10H01L31/18Y02P70/50
Inventor 凌翠翠郭天超祝磊李小芳薛庆忠侯志栋
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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