Hexamethyldisilazane (HMDS) blowing structure of viscosity-enhancing unit

Abstract

The invention relates to the technical field of semiconductor spin coating and developing, in particular to a hexamethyldisilazane (HMDS) blowing structure of a viscosity-enhancing unit. An upper disccover is arranged on a support seat, an upper end cover is arranged at a middle part of the upper disc cover, a boss is arranged on a bottom plate of the support seat, a hot disc body is fixedly arranged on the boss, a wafer is placed on the hot disc body, the upper end cover, the upper disc cover, a support seat side wall, the boss and the hot disc body are encircled to form a sealing space, a rectification plate is arranged in the sealing space, a blowing region is formed between the hot disc body and the rectification plate, an air return region is formed between the rectification plate and the upper disc cover, gas in the blowing region flows into the air return region through an edge of the rectification plate, an air inlet passage and an air through groove are formed in the upper end cover, the air inlet passage communicates with the blowing region, a blowing hole of the air inlet passage is of an expansion structure, the air through groove communicates with the air return region, and an air outlet is formed in an outer wall of the air through groove. By the HMDS blowing structure, the HMDS blowing uniformity of the viscosity-enhancing unit is improved, and the viscosity-enhancing effect is ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductor film leveling and development, in particular to an HMDS purging structure of a thickening unit. Background technique [0002] In the prior art, according to the requirements of the semiconductor manufacturing process, the wafer needs to be sent to the viscosity-increasing unit for processing before being sent into the uniform glue chamber. The surface hydrophilicity is changed to hydrophobicity, and the effect of this viscosity-increasing treatment has a great influence on the late glue leveling process. In the prior art, due to strict requirements on the space size of the machine, it is usually required that each unit part is small and precise, so as to save space, improve the market competitiveness of the machine, and reduce customer costs, but the overall size of the unit is small, resulting in the viscosity of the thickening unit. The HMDS air inlet can only be located on the side of th...

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Problems solved by technology

[0002] In the prior art, according to the requirements of the semiconductor manufacturing process, the wafer needs to be sent to the viscosity-increasing unit for processing before being sent into the uniform glue chamber. The surface hydrophilicity is changed to hydrophobicity, and the effect of this viscosity-increasing treatment has a great influence on the late glue leveling process

In the prior art, due to strict requirements on the space size of the machine, it is usually required that each unit part is small and precise, so as to save space, improve the market competitiveness of the machine, and reduce customer costs, but the overall size of the unit is small, resulting in the viscosity of the thickening unit. The HMDS air inlet can only be located on the side of the pan, the air is drawn in horizontally and then the HMDS air is guided out through the upper end cover of the pan

In the actual process, due to the large amount of air intake, the fast air intake speed, and the small size of the space, there is usually not enough space for the velocity vector in the horizontal direction of the air intake on the side of the disk to change direction, so the purge When the wafer is used, assuming that the exhaust air and air outlet resistance of the surrounding areas are consistent, the air volume in the extending direction of the intake pipe is relatively large, and most of the air volume is blown away directly. Uneven purging, limited viscosifying effect

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