A kind of manufacturing method of dbr flip chip

A flip-chip and manufacturing method technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem that DBR flip-chip is not suitable for high-current and high-power use.

Active Publication Date: 2020-05-19
GUANGDONG DELI PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under the conditions of high current and high power, the thin transparent metal conductive film is not enough to spread the current uniformly, so the traditional DBR flip chip is not suitable for high current and high power use

Method used

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  • A kind of manufacturing method of dbr flip chip
  • A kind of manufacturing method of dbr flip chip
  • A kind of manufacturing method of dbr flip chip

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0016] The specific embodiments of the present invention will be described in further detail below in conjunction with the drawings and embodiments. The following examples are used to illustrate the present invention, but not to limit the scope of the present invention.

[0017] See Figure 1-2 , Is a DBR flip chip manufacturing method provided by the present invention, including the following steps: step one, fabricating an epitaxial layer; specifically, the step one includes: sequentially growing a buffer layer on the sapphire substrate 1 by MOCVD equipment 2. The N-GaN layer 3, the light emitting quantum well 4 and the P-GaN layer 5 complete the fabrication of the GaN-based LED epitaxial layer. Step two, etch N-type steps on the epitaxial layer structure to make the N-GaN in a bare state; step three, grow a reflective layer and a metal binding layer 8 on the surface of the epitaxial layer, respectively; step four, A DBR Bragg reflector layer 9 is grown on the DBR flip chip, ...

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PUM

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Abstract

The invention relates to a fabrication method of a DBR flip chip. The fabrication method comprises the following steps of 1, fabricating an epitaxial layer; 2, etching an N-type step on an epitaxial layer structure; 3, growing a reflection layer and a metal binding layer on a surface of the epitaxial layer; 4, growing a DBR layer on the DBR flip chip, and respectively P electrode conductive holesand N electrode conductive holes; and 5, evaporating a current expansion metal layer on the DBR layer according to the arrangement of the conductive holes, and allowing the P electrode conductive holeand the N electrode conductive hole to be connected. According to the fabrication method of the DBR flip chip, provided by the invention, the uniform current expansion can be ensured under the application condition of large current and large power, so that the DBR flip chip can be applied to a large-power condition.

Description

Technical field [0001] The invention relates to the field of LED flip-chips, in particular to a manufacturing method of DBR flip-chips. Background technique [0002] The traditional DBR flip-chip process is based on the front-mounted chip process. The DBR passivation layer is evaporated on the front side of the front-mounted chip as a reflective layer, and the corresponding P electrode conductive holes and N electrode conductive holes are etched on the DBR layer. , Finally, P and N electrode layers are deposited on the surface of the DBR. The electrode layer respectively covers the P electrode conductive hole and the N electrode conductive hole in the DBR layer, and the P and N electrode holes are used to conduct the chip downward, thereby obtaining the effect of flip chip. Since the traditional flip chip uses the DBR mirror as the light reflecting layer, the area of ​​the current spreading metal layer between the light emitting layer and the light reflecting layer cannot be too...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/38H01L33/46
CPCH01L33/387H01L33/46H01L2933/0016H01L2933/0025
Inventor 张洪安陈慧秋武杰易翰翔李玉珠
Owner GUANGDONG DELI PHOTOELECTRIC
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