Unlock instant, AI-driven research and patent intelligence for your innovation.

Super junction field effect transistor and filling method of groove of super junction field effect transistor

A technology of junction field effect and filling method, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as incomplete depletion of bottom charges, inconsistent top and bottom dimensions, and difficulty in implementation.

Pending Publication Date: 2019-12-17
WILL SEMICON (SHANGHAI) CO LTD
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Ideally, the closer the inclination angle of the epitaxial trench to 90 degrees, the higher the voltage can be achieved. However, as the voltage of the product to be made becomes higher, the aspect ratio of the trench becomes larger and larger, and the ideal 90 degree is difficult. Realization, resulting in inconsistent top and bottom dimensions of the slot, resulting in the problem that the bottom charge cannot be completely depleted

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Super junction field effect transistor and filling method of groove of super junction field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is an embodiment of a part of the application, but not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.

[0022] It should be noted that the terms "first" and "second" in the description and claims of the present application and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate circumstances such...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention discloses a super junction field effect transistor and a filling method of a groove of the super junction field effect transistor, doping materials with different concentrations are used for filling a groove to form a filling layer, the doping concentration of the doping materials is gradually changed, and a problem that a breakdown voltage is insufficient due to the fact that charges at the bottom of the groove cannot be well matched is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a super junction field effect transistor and a filling method for a trench thereof. Background technique [0002] High-voltage super junction (super junction) MOSFET (field-effect transistor) is widely used in high-voltage and high-power modules due to its low on-resistance. The hybrids deplete each other, and according to Poisson's equation, the electric field distribution is a triangular electric field. The breakdown voltage versus resistance relationship at a specific N-type doping concentration is limited by the silicon limit. By introducing P-type doping into the original N-type doped epitaxial layer, a lateral electric field is formed. Finally, the electric field distribution is changed from a triangle to a trapezoidal one, thereby breaking through the silicon limit (the law of mutual limitation between the product breakdown voltage and on-resistance), and achievin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/762H01L21/768H01L29/06H01L21/336
CPCH01L29/66666H01L29/7827H01L29/0634H01L21/76232H01L21/76816
Inventor 衷世雄
Owner WILL SEMICON (SHANGHAI) CO LTD