Graphene flexible conductive composite film and preparation method thereof
A graphene composite and composite film technology, which is applied in the direction of equipment for manufacturing conductive/semiconductive layers, cable/conductor manufacturing, conductive layers on insulating carriers, etc., can solve problems such as low resistivity, few functional groups, and difficulty in dispersion problem, to achieve the effect of improving conductivity, reducing the amount of addition, and improving dispersibility
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Embodiment 1
[0032] Such as figure 1 As shown, the present embodiment provides a method for preparing a graphene composite conductive film, and the specific steps are as follows:
[0033] a) Preparation of highly conductive graphene composite powder: select graphene crystal defect ID / IG=6%, sheet diameter D90=7μm, specific surface area BET=70m 2 9 parts of graphene powder / g, 90 parts of 3,4-ethylenedioxythiophene monomer, 1 part of ferric sulfate initiator; add graphene, 3,4-ethylenedioxythiophene monomer and initiator to the reactor , the reaction temperature is 5°C, the polymerization reaction is 12h, and the reaction protective atmosphere is N 2 , the reactant is cooled and dried, and pulverized to obtain graphene / poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid composite conductive powder;
[0034] b) Preparation of graphene composite dispersion liquid: the ratio of graphite microflakes: conductive carbon black: pure water is 1:1:90, and the dispersion adopts a high-speed di...
Embodiment 2
[0040] This embodiment provides a graphene composite conductive film. The difference between this embodiment and Embodiment 1 is that in step a), the graphene crystal defect ID / IG=4% is selected, and the rest of the steps are the same.
Embodiment 3
[0042] This embodiment provides a graphene composite conductive film. The difference between this embodiment and Embodiment 1 is that in step a), the graphene crystal defect ID / IG=8% is selected, and the rest of the steps are the same.
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