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Wafer detection method and detection equipment

A detection method and technology of detection equipment, applied in the direction of semiconductor/solid state device testing/measurement, measurement device, instrument, etc., can solve the problems of difficult accurate detection of transparent film layer, limited detection surface film layer material type, etc., to achieve convenient and unified Optimized settings, reduced detection differences, and improved detection efficiency

Active Publication Date: 2020-06-16
YANGTZE MEMORY TECH CO LTD
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  • Application Information

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Problems solved by technology

In related technologies, the surface topography of the wafer can be detected by optical methods, and then the detection of defects on the wafer surface can be realized. However, the existing surface topography detection method is limited by the material type of the detection surface film layer. For transparent films layer is difficult to achieve accurate detection

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  • Wafer detection method and detection equipment
  • Wafer detection method and detection equipment
  • Wafer detection method and detection equipment

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Embodiment Construction

[0060] figure 1 A flow chart of a wafer detection method provided in the embodiment of the present application, such as figure 1 As shown, the method includes:

[0061] Step S101, forming a barrier layer on the surface of the wafer to be inspected; wherein, the barrier layer is used to block the detection optical signal;

[0062] Step S102, irradiating the detection light signal to the surface of the barrier layer;

[0063] Step S103, receiving a reflected light signal obtained by reflecting the detection light signal from the barrier layer;

[0064] Step S104 , determining surface topography information of the wafer according to the reflected light signal.

[0065]In the semiconductor manufacturing process, a patterned thin film is formed on the surface of the wafer by methods such as multilayer deposition and photolithography, and then various electrical components and circuit structures are formed. Since the device patterns on the wafer surface have regular characterist...

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Abstract

The embodiment of the invention discloses a wafer detection method and detection equipment. The detection method comprises the steps of forming a barrier layer on the surface of a wafer to be detected, wherein the barrier layer is used for blocking a detection light signal; irradiating the detection light signal to the surface of the barrier layer; receiving a reflected light signal obtained by reflecting the detection light signal by the barrier layer; and determining surface topography information of the wafer according to the reflected light signal.

Description

technical field [0001] The embodiment of the present application relates to semiconductor technology, and relates to but not limited to a wafer detection method and detection equipment. Background technique [0002] In the production process of semiconductor devices, it is necessary to perform multiple complex processing procedures on the wafer, and use multi-layer deposition, photolithography and other methods to form a patterned thin film on the surface of the wafer, and then form various electrical components and circuit structures, etc. . In this process, it is necessary to ensure the quality of each layer of the process and find out the defective points in time. Therefore, the inspection of the wafer is an indispensable and important link in the semiconductor manufacturing process. In related technologies, the surface topography of the wafer can be detected by optical methods, and then the detection of defects on the wafer surface can be realized. However, the existing...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66G01B11/24
CPCG01B11/2441H01L22/12
Inventor 丁小叶王思聪周毅
Owner YANGTZE MEMORY TECH CO LTD