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MRAM electrode and preparation method thereof

A technology of electrodes and electrode layers, which is applied to parts of electromagnetic equipment, manufacturing/processing of electromagnetic devices, and resistors controlled by magnetic field, etc. It can solve the problems that the magnetic moment of the free layer is not easy to control, and the electrical performance of MTJ fluctuates greatly. , to avoid the uncontrollable stray magnetic field, reduce the switching current, and realize the effect of simple process

Active Publication Date: 2020-11-24
CETHIK GRP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the magnetic moment of the polarized layer to the free layer is not easy to control, resulting in large fluctuations in the electrical properties of the MTJ.

Method used

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  • MRAM electrode and preparation method thereof
  • MRAM electrode and preparation method thereof
  • MRAM electrode and preparation method thereof

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Embodiment Construction

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0031] An embodiment of the present invention provides an MRAM electrode, such as figure 1 As shown, the MRAM electrode 10 includes: an isolation layer 101, an electrode layer 102 and a cover layer 103 arranged in a stack, wherein,

[0032] One side surface of the isolation layer 101 is close to the MTJ free layer, and the isolation layer 10...

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Abstract

The invention provides an MRAM electrode, which comprises an isolation layer, an electrode layer and a covering layer which are stacked, and the surface of one side of the isolation layer is close toan MTJ free layer; the electrode layer is arranged on the surface of one side, far away from the MTJ free layer, of the isolation layer, and the electrode layer has in-plane anisotropic magnetization;the covering layer is arranged on the surface of the side, away from the isolation layer, of the electrode layer. According to the invention, a controllable magnetic moment can be provided for the MTJ free layer to assist the MTJ free layer in overturning.

Description

technical field [0001] The invention relates to the technical field of magnetic memory, in particular to an MRAM electrode and a preparation method thereof. Background technique [0002] In recent years, MRAM (Magnetic Random Access Memory, magnetic random access memory) is considered to be the future solid-state non-volatile memory. Compatible with the current semiconductor technology and other advantages. [0003] The core storage unit in MRAM is MTJ unit, and its structure mainly includes magnetic free layer / nonmagnetic barrier layer / magnetic reference layer. Driven by an external magnetic field or current, the direction of the magnetic moment of the magnetic free layer is reversed, and it is parallel or antiparallel to the direction of the magnetic moment of the magnetic reference layer, making the MRAM appear in a high and low resistance state, which can be defined as the storage state "0" respectively. " and "1", so as to realize the storage of information. [0004]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/02H01L43/08H01L43/12H10N50/80H10N50/01H10N50/10
CPCH10N50/80H10N50/10H10N50/01
Inventor 韩谷昌竹敏何世坤
Owner CETHIK GRP
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