Semiconductor device and manufacturing method thereof

[0108] Example 1. A semiconductor device comprising: a substrate; a first gate structure, a second gate structure and a third gate structure, the first gate structure, the second gate structure and the third gate structure A tri-gate structure is located over the substrate and is arranged along a first direction, wherein the first gate structure, the second gate structure and the third gate structure are different from the first gate structure extending in a second direction of the direction, and the second gate structure is located between the first gate structure and the third gate structure; and a first source/drain region, the first source A pole/drain region is located between the first gate structure and the third gate structure and at one end of the second gate structure.

[0109] Example 2. The semiconductor device of Example 1, wherein the first gate structure and the second gate structure have a first pitch, and the second gate structure and the third gate structure There is a second pitch that is substantially the same as the first pitch.

[0110] Example 3. The semiconductor device of Example 1, wherein the first source/drain region has a length in the first direction, and the length of the first source/drain region is greater than the distance between the first gate structure and the second gate structure.