Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve difficult design and manufacturing problems

Pending Publication Date: 2021-06-29
TAIWAN SEMICON MFG CO LTD +2
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Problems solved by technology

Increasingly dense ICs yield benefits in speed, functionality, and cost,...
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Abstract

The invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a substrate; a first gate structure, a second gate structure and a third gate structure; and a first source/drain region. The first gate structure, the second gate structure and the third gate structure are over the substrate and arranged along a first direction. The first gate structure, the second gate structure and the third gate structure extend in a second direction different from the first direction, and the second gate structure is between the first gate structure and the third gate structure. The first source/drain region is between the first gate structure and the third gate structure and at one end of the second gate structure.

Application Domain

TransistorSolid-state devices +3

Technology Topic

EngineeringDevice material +3

Image

  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

  • Experimental program(20)

Example

[0108] Example 1. A semiconductor device comprising: a substrate; a first gate structure, a second gate structure and a third gate structure, the first gate structure, the second gate structure and the third gate structure A tri-gate structure is located over the substrate and is arranged along a first direction, wherein the first gate structure, the second gate structure and the third gate structure are different from the first gate structure extending in a second direction of the direction, and the second gate structure is located between the first gate structure and the third gate structure; and a first source/drain region, the first source A pole/drain region is located between the first gate structure and the third gate structure and at one end of the second gate structure.

Example

[0109] Example 2. The semiconductor device of Example 1, wherein the first gate structure and the second gate structure have a first pitch, and the second gate structure and the third gate structure There is a second pitch that is substantially the same as the first pitch.

Example

[0110] Example 3. The semiconductor device of Example 1, wherein the first source/drain region has a length in the first direction, and the length of the first source/drain region is greater than the distance between the first gate structure and the second gate structure.

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Description & Claims & Application Information

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