Semiconductor device and manufacturing method thereof

Abstract

The invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a substrate; a first gate structure, a second gate structure and a third gate structure; and a first source / drain region. The first gate structure, the second gate structure and the third gate structure are over the substrate and arranged along a first direction. The first gate structure, the second gate structure and the third gate structure extend in a second direction different from the first direction, and the second gate structure is between the first gate structure and the third gate structure. The first source / drain region is between the first gate structure and the third gate structure and at one end of the second gate structure.

Description

technical field [0001] The present disclosure relates to semiconductor devices and methods of manufacturing the same. Background technique [0002] Integrated circuits (ICs) are typically designed to implement various devices including, for example, transistors, resistors, capacitors, and the like. These devices are generally designed to use the connection of conductive traces to form an electrical circuit. Increasingly dense ICs yield benefits in speed, functionality, and cost, but also lead to increasingly difficult design and manufacturing problems. Contents of the invention [0003] According to an embodiment of the present disclosure, there is provided a semiconductor device, including: a substrate; a first gate structure, a second gate structure and a third gate structure, the first gate structure, the second The gate structure and the third gate structure are located above the substrate and arranged along a first direction, wherein the first gate structure, the se...

AI Technical Summary

Problems solved by technology

Increasingly dense ICs yield benefits in speed, functionality, and cost, but also create increasingly difficult design and manufacturing problems

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