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Full-coverage perovskite thin film and preparation method thereof

A perovskite, full-coverage technology used in the field of solar cells to achieve improved optical properties, low cost, and good repeatability

Pending Publication Date: 2021-07-06
XI'AN PETROLEUM UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a fully covered perovskite thin film and its preparation method for the deficiencies in the above-mentioned prior art, which can effectively improve the optical properties of the light-absorbing layer of the perovskite battery and solve the problems in the prior art. The limitation of perovskite solar cells is that dense and pinhole-free perovskite films with large grain sizes must be prepared in inert equipment; box) laboratories, especially for large-scale industrialization in the future

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  • Full-coverage perovskite thin film and preparation method thereof
  • Full-coverage perovskite thin film and preparation method thereof
  • Full-coverage perovskite thin film and preparation method thereof

Examples

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Embodiment 1

[0050] A method for preparing a fully covered perovskite film in an atmospheric environment, comprising the following steps:

[0051] Step 1: Preparation of CH 3 NH 3 PB 3 Precursor

[0052] Measure PbI 2 The amount of 1.005g, CH 3 NH 3 The amount of I is 0.3466g, the amount of DMF is 3ml, magnetic stirring is used for 30min, and the solution method is used to dissolve and fully react to form a yellow precursor.

[0053] Step 2: Deposit CH 3 NH 3 PB 3 film

[0054] CH prepared in step S1 3 NH 3 PB 3 Add it dropwise on the FTO substrate, spin-coat at 1000r / min for 10s, then spin-coat at 2000r / min for 30s, use a pipette gun to pump 200μl of chlorobenzene, and drop it quickly in semi-dry CH for 15s during the last spin-coating 3 NH 3 PB 3 on the film. Finally, the film was annealed at 80°C.

[0055] see figure 1 and figure 2 , for the prepared full coverage CH 3 NH 3 PB 3 Optical photographs of thin films, CH 3 NH 3 PB 3 The thickness of the film is 100 ...

Embodiment 2

[0057] A method for preparing a high-quality perovskite film in an atmospheric environment, comprising the following steps:

[0058] Step 1: Preparation of CH 3 NH 3 PB 3 Precursor

[0059] Measure PbI 2 The amount of 1.005g, CH 3 NH 3 The amount of I is 1.0398g, the amount of DMF is 6ml, magnetically stirred for 50min, and the solution method is used to dissolve and fully react to form a yellow precursor.

[0060] Step 2: Deposit CH 3 NH 3 PB 3 film

[0061] CH prepared in the previous step 3 NH 3 PB 3 Add it dropwise on the FTO substrate, spin-coat at 1000r / min for 10s, then spin-coat at 2000r / min for 30s, use a pipette gun to pump 200μl of CB, and quickly drop it over CH 3 NH 3 PB 3 on the film. Finally, the film was annealed at 80°C.

[0062] see image 3 , for the prepared full coverage CH 3 NH 3 PB 3 The PL characterization of the film shows that the relative exciton growth rate is 13747.83a.u. Prepared CH 3 NH 3 PB 3 The thickness of the film is...

Embodiment 3

[0064] A method for preparing a high-quality perovskite film in an atmospheric environment, comprising the following steps:

[0065] Step 1: Preparation of CH 3 NH 3 PB 3 Precursor

[0066] Measure PbI 2 The amount of 1.005g, CH 3 NH 3 The amount of I is 0.3466g, the amount of γ-butyrolactone is 3ml, magnetically stirred for 50min, and the solution method is used to dissolve and fully react to form a yellow precursor.

[0067] Step 2: Deposit CH 3 NH 3 PB 3 film

[0068] CH prepared in the previous step 3 NH 3 PB 3 Add it dropwise on the FTO substrate, spin-coat at 1000r / min for 15s, then spin-coat at 2000r / min for 35s, use a pipette gun to pump 200μl of CB, and drop it quickly for 15s to cover CH 3 NH 3 PB 3 on the film. Finally, the film was annealed at 80°C.

[0069] see Figure 4 , for the prepared full coverage CH 3 NH 3 PB 3 The PL characterization of the film shows that the relative exciton growth rate is 11073.17a.u. Prepared CH 3 NH 3 PB 3 The...

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Abstract

The invention discloses a full-coverage perovskite thin film and a preparation method thereof, and the method comprises the steps: mixing PbI2 powder and CH3NH3I powder, adding a solvent, and carrying out the magnetic stirring, so as to obtain a completely reacted CH3NH3PbI3 precursor; and dropwise adding the CH3NH3PbI3 precursor on the FTO substrate, and carrying out spin-coating treatment by using an anti-solvent method to obtain the full-coverage perovskite thin film. According to the invention, the optical characteristics of the light absorption layer of the perovskite cell are effectively improved, and the limitation that a compact and pinhole-free perovskite thin film with a large grain size must be prepared in inert equipment in the perovskite solar cell in the prior art is solved; operation is simple and cost is low.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a fully covered perovskite thin film and a preparation method thereof. Background technique [0002] Fossil fuels are one of the main contributors to global warming, and in order to solve this problem, it is necessary to develop clean energy sources that are easily accessible and sustainable. Unlike fossil fuels, the sun is an inexhaustible source of energy. The energy it delivers to the earth in one hour exceeds the energy consumed by the entire earth in a year. Therefore, it is a kind of energy to collect energy from the sun and convert it into electricity using photovoltaic cells. Effective link clean energy supply mode. In the past two decades, third-generation solar cells, such as dye-sensitized solar cells, quantum dot solar cells, organic solar cells, and perovskite solar cells, have received extensive attention from researchers. In particular, perovskite...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/12H10K30/10H10K30/80Y02E10/549
Inventor 李燕贺红肖美霞王磊朱世东郑佳璐
Owner XI'AN PETROLEUM UNIVERSITY
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