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Phase modulation method based on phonon polaritons

A polariton and phase modulation technology, applied in instruments, nonlinear optics, optics, etc., can solve the problems of difficult control of phonon polariton, short lifetime, high ohmic loss of surface plasmon, etc.

Pending Publication Date: 2022-05-13
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, surface plasmons have high ohmic losses and relatively short lifetimes, and phonon polaritons are difficult to control due to the limitations of the inherent lattice structure of the material.

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  • Phase modulation method based on phonon polaritons
  • Phase modulation method based on phonon polaritons
  • Phase modulation method based on phonon polaritons

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Embodiment Construction

[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0028] The purpose of the present invention is to provide a phase modulation method based on phonon polaritons, which can realize continuous dynamic adjustment of the transmission phase of phonon polaritons.

[0029] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[00...

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Abstract

The invention relates to a phase modulation method based on phonon polaritons, the method is applied to a phase modulation device, and the phase modulation method comprises the following steps: using scattered light or infrared light as incident light to irradiate a metal antenna, and exciting a molybdenum oxide layer to derive molybdenum oxide phonon polaritons; regulating and controlling the carrier concentration of the graphene strip by adjusting the chemical doping time of the graphene strip; according to the method, the dispersion of the hybrid mode of the graphene plasmon and the molybdenum oxide phonon polaritons is adjusted, the phase velocity of the hybrid mode of the molybdenum oxide phonon polaritons transmitted to a graphene strip area is changed, and the phase modulation of the molybdenum oxide phonon polaritons is realized; the graphene plasmon is generated by irradiating and exciting the graphene strip by incident light. The phase modulation method is based on the phase modulation device, and continuous dynamic regulation and control of the molybdenum oxide phonon polariton transmission phase are achieved by changing the carrier concentration of a graphene strip.

Description

technical field [0001] The invention relates to the technical field of phase modulation of mid-infrared lasers, in particular to a phase modulation method based on phonon polaritons. Background technique [0002] Optical modulation is an important manipulation in photonics and optoelectronics research, in which the modulation of optical amplitude and phase is particularly important, and has a wide range of applications in wavefront manipulation, conversion optics, phase arrays, modulators, and sensors. Traditional optical modulators include silicon (Si)-based and lithium niobate (LiNbO 3 )Modulator. Among them, in integrated silicon photonics, it is realized by using the free carrier plasma dispersion effect, and the change of electron and hole density will lead to the change of silicon refractive index and absorption, so as to realize the modulation effect. But these effects usually require millimeter-sized devices, which tend to limit modulation efficiency and increase m...

Claims

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Application Information

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IPC IPC(8): G02F1/015G02F1/025
CPCG02F1/0152G02F1/025G02F2203/50
Inventor 戴庆胡海陈娜滕汉超
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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