Check patentability & draft patents in minutes with Patsnap Eureka AI!

Manufacturing method of D-dot sensor

A production method and sensor technology, applied in the field of D-dot sensor production, can solve the problems of incomplete reflection of D-dot sensor response capability, failure to clearly explain the relationship between D-dot sensor circuit parameters and structural parameters, etc., to achieve design The effect of rich indicators, perfect response characteristics, and perfect estimation

Pending Publication Date: 2022-07-22
NORTHWEST INST OF NUCLEAR TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The purpose of the present invention is to oversimplify the circuit model of the existing D-dot sensor, which cannot fully reflect the response capability of the D-dot sensor, and fails to clearly explain the technical problem of the relationship between the circuit parameters and the structural parameters of the D-dot sensor, and A manufacturing method of a D-dot sensor is provided, and the numerical relationship between the design index and the structural parameters of the D-dot sensor is established

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of D-dot sensor
  • Manufacturing method of D-dot sensor
  • Manufacturing method of D-dot sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0075] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention and the accompanying drawings. Obviously, the described embodiments do not limit the present invention.

[0076] Firstly, the key structural parameters in the design of the target D-dot sensor are clarified, such as figure 2 As shown, it is a typical D-dot sensor structure, including a receiving electrode 1, a D-dot sensor insulator 2, and a ground electrode 3. figure 2 The structural parameters of the D-dot sensor include D 1 , D 2 , D 3 , D 4 and l, D 1 is the diameter of the sensor receiving electrode 1, D 2 Outer diameter of the coaxial structure for the cable outlet, D 3 The inner diameter of the coaxial structure for the cable outlet, D 4 is the outer diameter of the sensor ground electrode 3, l is the distance between the sensor ground electrode 3 and the receiving electrode 1, d is the distance betwee...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Impedanceaaaaaaaaaa
Login to View More

Abstract

The invention relates to a manufacturing method of a pulse voltage sensor, in particular to a manufacturing method of a D-dot sensor, which is applied to design of a voltage pulse D-dot sensor with leading edge time from ns to hundreds of ns magnitude and amplitude at an MV level, and solves the problems that a circuit model of an existing D-dot sensor is excessively simplified, the response capability of the D-dot sensor cannot be completely reflected, and the design of the D-dot sensor is influenced. And the relation between the circuit parameters and the structure parameters of the D-dot sensor cannot be clearly elaborated. The manufacturing method of the D-dot sensor comprises the following steps: step 1, determining structural parameters of a target D-dot sensor; 2, determining a design index of the D-dot sensor according to the to-be-detected signal; 3, establishing a numerical relationship between the design indexes of the D-dot sensor and the circuit parameters of the D-dot sensor; 4, establishing a numerical relationship between circuit parameters and structural parameters of the D-dot sensor; and 5, manufacturing a target D-dot sensor according to the structural parameters obtained in the step 4. The main body structure design of the D-dot sensor can be effectively guided from design indexes.

Description

technical field [0001] The invention relates to a manufacturing method of a pulsed voltage sensor, in particular to a manufacturing method of a D-dot sensor, which is applied to the design of a voltage pulse D-dot sensor with a leading edge time in the order of ns to hundreds of ns and an amplitude in the MV level. Background technique [0002] In pulsed power devices, capacitively coupled sensors are usually used for MV-level voltage pulse measurements. By reasonably setting the circuit parameters of the capacitive coupling sensor, its output signal can be the differential waveform of the voltage pulse to be measured, that is, a differential capacitive coupling sensor (also known as a D-dot sensor). The obtained differential signal can be restored by numerical integration or RC integration loop. If numerical integration is used, the hardware composition of the measurement system is very simple, consisting only of the D-dot sensor itself and the measurement cable; the respo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F30/20G01R19/00
CPCG06F30/20G01R19/0084
Inventor 罗维熙呼义翔尹佳辉张信军杨实张天洋孙江丛培天陈伟
Owner NORTHWEST INST OF NUCLEAR TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com