Fin FET devices from bulk semiconductor and method for forming
A semiconductor, fin-like technology, applied in the field of manufacturing fin field effect transistors, can solve the problem of not providing a method to control the height of the fin
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[0018] Accordingly, the present invention provides a device structure and method for forming a Fin Field Effect Transistor (FET) that overcomes many of the disadvantages of the prior art. Specifically, the device structure and method enable formation of finFET devices from bulk semiconductor wafers while improving device uniformity. This approach facilitates the formation of finFET devices from bulk semiconductor wafers and provides improved control over fin height. In addition, this approach enables the formation of finFETs from bulk semiconductors while providing isolation between individual fins and between the source and drain regions of individual finFETs. Finally, this approach can also provide optimization of the fin width. The device structure and method of the present invention therefore has the advantage that uniform finFETs can be fabricated on bulk wafers.
[0019] One embodiment of the present invention uses a process prior to fin patterning to provide improved ...
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