Method of measuring built crystal layer thickness

An epitaxial layer, epitaxial technology, applied in the direction of measurement devices, semiconductor/solid-state device testing/measurement, instruments, etc.

Inactive Publication Date: 2003-12-03
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, when the epitaxial layer and the substrate are made of the same material and the difference in dopant concentration is small, or the dopant concentration of the epitaxial layer is lower than that of the substr

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  • Method of measuring built crystal layer thickness
  • Method of measuring built crystal layer thickness
  • Method of measuring built crystal layer thickness

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Embodiment Construction

[0015] It should be noted here that the process steps and structures described below do not include a complete process. The present invention can be implemented by means of various integrated circuit process technologies, and only those process technologies required for an understanding of the present invention are mentioned here.

[0016] Hereinafter, the present invention will be described in detail according to the accompanying drawings. Please note that the drawings are in simple form and not drawn to scale, and the dimensions are exaggerated to facilitate understanding of the present invention.

[0017] refer to figure 1 As shown, a substrate 100 is shown having a layer 102 thereon. The substrate 100 includes at least a semiconductor substrate, such as a silicon substrate with a lattice orientation, but not limited to a silicon substrate with a lattice orientation. The substrate 100 may also include other semiconductor substrates such as diamond-like carbon, and may a...

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Abstract

A method for measuring the thickness of an epitaxial layer on substrate includes such steps as generating a non-monocrystal layer on substrate, generating an epitaxial layer to be measured to become polycrystal on the non-monocrystal layer, measuring the thicknesses of polycrystal layer and non-crystal layer and the difference between their thickness sum and said epitaxial layer to be measured, and subtracting.

Description

(1) Technical field [0001] The invention relates to a method for measuring the thickness of an epitaxial layer, in particular to a method for measuring the thickness of an epitaxial layer on a production line. (2) Background technology [0002] In the manufacturing process of semiconductor components, the thickness measurement of the epitaxial layer on the semiconductor wafer is very important. Traditional methods for measuring the thickness of epitaxial layers include many methods based on the principle of physical optics of infrared (Infrared) interference. According to these principles, infrared rays are irradiated on the wafer and reflected from the surface of the epitaxial layer and the interface between the epitaxial layer and the wafer. To measure the thickness of an epitaxial layer on a wafer, the infrared incident beam is directed to a small area there. The incident infrared beam is split into two reflected beams. One light beam is reflected from the surface of t...

Claims

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Application Information

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IPC IPC(8): H01L21/66
CPCH01L22/24
Inventor 林庆福曾华洲杨镫祺
Owner UNITED MICROELECTRONICS CORP
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