Integrating device
A technology of integrated devices and integrated circuits, which is applied in radiation control devices, photovoltaic power generation, electrical components, etc., and can solve problems such as undisclosed circuit component technologies
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Embodiment 1
[0120] figure 1 denotes a linear element used in an integrated device according to an embodiment of the present invention.
[0121] 6 denotes a linear element, and a MOSFET is shown in this embodiment.
[0122] In the section of the device, there is a gate electrode region 1 in the center, and an insulating region 2 , a source region 4 , a drain region 3 and a semiconductor region 5 are sequentially formed outside it.
[0123] figure 2 A general configuration of an extruder used to form the above-mentioned linear element is shown.
[0124]The extruder 20 has raw material containers 21 , 22 , and 23 , and keeps the raw materials constituting the plurality of regions in a molten state, a dissolved state, or a gel state. figure 2 In the example shown in , three raw material containers are shown, but it can also be appropriately designed according to the structure of the manufactured linear element.
[0125] The raw material in the raw material container 23 is conveyed to th...
Embodiment 2
[0138] Figure 4 A linear element used in the integrated device according to Example 2 is shown.
[0139] In this embodiment, the output electrode described in Embodiment 1 is provided on the side of the linear element. Figure 4 The output units 41a and 41b shown in (a) can be provided at desired positions in the longitudinal direction. The distance between the output part 41a and the output part 41b can also be set to a desired value.
[0140] Figure 4 (a) shows the A-A cross section of the output unit 41 . also, Figure 4 (b) B-B section such as figure 1 Configuration of end faces shown.
[0141] In this embodiment, on the side surfaces of the source 4 and the drain 3 , the source electrode 45 and the drain electrode 46 are connected as output electrodes to the source 4 and the drain 3 respectively. In addition, the semiconductor layer 5 is insulated from the source electrode 45 and the drain electrode 46 by insulating films 47, respectively.
[0142] To form the a...
Embodiment 3
[0148] Figure 6 Another embodiment is shown.
[0149] In Examples 1 and 2, an example in which linear elements are integrally formed by extrusion is shown, but in this example, an example in which a part of the linear element is formed by extrusion and other parts are formed by external processing will be shown. .
[0150] Here, the linear element shown in Example 2 will be described as an example.
[0151] First, the gate electrode 1 and the insulating film 2 are pressed out to form a linear intermediate ( Figure 6 (a)).
[0152] Next, a semiconductor material in molten or dissolved state or gel state is coated on the outside of the insulating film 2 to form a semiconductor layer 61 as a secondary intermediate ( Figure 6 (b)). For the above coating, the linear intermediate body may be passed through a tank of the semiconductor material in a melted or dissolved state, or in a gel state. Alternatively, a method such as vapor deposition may also be used.
[0153] After...
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