Semiconductor packaging and semiconductor module

A semiconductor and electrical conductivity technology, applied in the field of semiconductor modules, can solve the problems of increased plane size, large semiconductor package, unfavorable equipment investment and engineering management, etc., to achieve the effect of miniaturization

Active Publication Date: 2006-06-07
KK TOSHIBA
View PDF2 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the planar size of the second electrode plate 4 increases, and the semiconductor package 1 becomes larger.
In addition, leaving the wire bon

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor packaging and semiconductor module
  • Semiconductor packaging and semiconductor module
  • Semiconductor packaging and semiconductor module

Examples

Experimental program
Comparison scheme
Effect test

Example

[0037] (First embodiment)

[0038] Reference Figure 1 to Figure 6 The first embodiment of the present invention will be described.

[0039] Such as figure 1 with figure 2 As shown, the semiconductor package 10 is constituted by laminating the following components: an IGBT element (semiconductor element) 20 as a power semiconductor element; a first electrode plate 30 arranged on the surface (main surface) 21a side of the IGBT element 20; The second electrode plate 40 on the side of the back surface 21 b that faces the surface of the IGBT element 20; the insulating substrate 50 arranged between the first electrode plate 30 and the IGBT element 20. The outer peripheral edge of the IGBT element 20 is provided inside the outer peripheral edges of the first electrode plate 30, the second electrode plate 40, and the insulating substrate 50.

[0040] IGBT element 20 such as figure 2 with image 3 As shown, the IGBT is mounted on a so-called semiconductor chip 21 which is a small plate...

Example

[0064] (Second embodiment)

[0065] Refer to Figure 7 to Figure 9 The second embodiment of the present invention will be described.

[0066] The second embodiment of the present invention is basically the same as the first embodiment, and in the second embodiment, parts different from the first embodiment will be described. In addition, in the second embodiment, the same parts as those described in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted (the same applies to the other embodiments).

[0067] The difference between the second embodiment and the first embodiment is as follows:Figure 7 As shown, the opposing surface (first power electrode) 31a of the first electrode plate 30 on the IGBT element 20 side becomes a plane, the IGBT element 20 and the first electrode plate 30 are soldered together, and the IGBT element 20 and the insulating substrate 50 are soldered together. The welding and the brazing of the IGBT element 20...

Example

[0077] (Third Embodiment)

[0078] Refer to Picture 10 The third embodiment of the present invention will be described.

[0079] The third embodiment of the present invention is basically the same as the second embodiment, and the parts of the third embodiment that are different from the second embodiment will be described.

[0080] The difference between the third embodiment and the second embodiment is as follows: Picture 10 As shown, in the semiconductor package 10, a resin portion 80 is provided between the first electrode plate 30 and the second electrode plate 40, which surrounds the IGBT element 20.

[0081] By filling the space between the first electrode plate 30 and the second electrode plate 40 with resin, the resin portion 80 is provided around the IGBT element 20. As a result, the first electrode plate 30 and the second electrode plate 40 are fixed to each other, and the periphery of the IGBT element 20 is covered by the resin portion 80.

[0082] In this way, accor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Provided are a semiconductor package capable of miniaturization by connecting semiconductor elements without using wire bonding, and a semiconductor module including the semiconductor package. It has: an IGBT element (20), which has an emitter electrode (22), a gate electrode (23), and an emitter electrode on the surface (21a), and has a collector electrode (26) on the back surface (21b); the first electrode plate ( 30), set opposite to the surface (21a) of the IGBT element (20), having a protrusion connected to the emitter (22) by soldering; the second electrode plate (40), and the back surface of the IGBT element (20) (21b) oppositely disposed, having an opposite surface (41b) connected to the collector (26) by brazing; an insulating substrate (50), disposed between the first electrode plate (30) and the IGBT element (20) , with a connection pad connected to the gate electrode (23) and the radiation sensing electrode by soldering.

Description

technical field [0001] The present invention relates to a semiconductor package and a semiconductor module, and particularly relates to a semiconductor package having a semiconductor element for power, a power control device such as an inverter, a converter, etc., and a semiconductor package that is modularized in multiples module. Background technique [0002] As semiconductor elements for power, IGBT elements (switching elements), IEGTs, MOS-FETs, and the like are often used. All of these power semiconductor elements have front-side power terminals and control terminals on the front surface, and rear-side power terminals on the back surface. In addition, when the power semiconductor element is an IGBT element, the front-side power terminal is an emitter, the back-side power terminal is a collector, and the control terminal is a gate electrode. [0003] When this type of semiconductor element for power is mounted on a substrate and packaged, the power terminal on the back...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L23/488
CPCH01L24/34H01L2224/4847H01L2224/78301H01L2924/13091H01L2924/13055H01L2924/01322H01L2224/37147H01L2224/84801H01L2224/34H01L2224/83801H01L2924/00014H01L2224/0603H01L2924/00H01L2224/37599H01L2924/00012H01L2224/73221
Inventor 吉冈心平池谷之宏渡边尚威田多伸光新留正和
Owner KK TOSHIBA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap