Unlock instant, AI-driven research and patent intelligence for your innovation.

Recovery processing method of an electrode

A recovery treatment, electrode technology, applied in the direction of circuit, electrical components, printed circuit assembly of electrical components, etc., can solve the problems of increased contact area, unavailable electrical connection, insufficient contact pressure, etc.

Inactive Publication Date: 2006-06-28
YAMAICHI ELECTRONICS
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the end surface of the electrical contact portion or the conductive circuit is irreversible according to the frequency of use, and becomes a substantially flat surface without unevenness, so the contact area increases, and there is a risk of insufficient contact pressure.
As a result, a reliable electrical connection initially obtained may not be obtained with use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Recovery processing method of an electrode
  • Recovery processing method of an electrode
  • Recovery processing method of an electrode

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0034] Figure 7 A socket for a semiconductor device including a connection electrode plate according to a first embodiment to which the electrode recovery treatment method of the present invention is applied, a second embodiment to be described later, and a third embodiment is shown.

[0035] exist Figure 7 The illustrated socket for a semiconductor device is used for, for example, an electrical characteristic test of a semiconductor device, specifically, a burn-in test and the like. The semiconductor device socket includes a carrier device 40 that accommodates a bare chip as a semiconductor device therein, and an IC socket 30 that accommodates the carrier device 40 in a housing portion in a detachable manner.

[0036]The IC socket 30 mainly includes a main body portion 32, a contact member group 34, and a cover member 36, wherein the main body portion 32 is arranged to print input and output of inspection signals to the bare chip and detection output signals from the bare ...

no. 2 Embodiment approach

[0079] Figure 10A, Figure 10B, Figure 10C A second embodiment of the electrode recovery treatment method of the present invention is schematically shown.

[0080] For Figure 10A~ Figure 10C The contact sheet 80 used in the illustrated example has, as shown in FIG. 10A , a plurality of bumps 84B arranged in a substrate 84M corresponding to the electrode groups of the bare chip 60 to be electrically connected. The tip of each bump 84B protrudes a predetermined height from the surface of the base material 84M. The surface at its front end is as a whole Figure 11A Minute unevenness 84a is formed as shown enlarged.

[0081] Each bump 84B is electrically connected to a pad (not shown) through a conductor layer 84C made of copper foil. The pads are formed on both end portions protruding outward from both end portions of the base member 42 as described above in the base material 84M. Each bump 84B is formed in a substantially conical shape by, for example, a material obtained ...

no. 3 Embodiment approach

[0114] Figure 15 with Figure 16 The structure of the bracket device table used in the third embodiment of the electrode recovery treatment method of the present invention is schematically shown together with the duplication board fixing head.

[0115] exist Figure 15 with Figure 16 in, right in Figure 7 with Figure 8 In the illustrated bracket device, the same components are assigned the same symbols, and repeated description thereof will be omitted. In addition, in Figure 15 Figure 16 In , a state in which some components of the bracket device in which the pressing cover has been removed is held on the bracket device table is shown.

[0116] Part of the bracket assembly such as Figure 15 with Figure 17 As shown, a carrier case 116 having an accommodating portion 116A for accommodating the bare chip 60, a contact piece 44 disposed on the base member 108 forming the bottom of the accommodating portion 116A of the carrier case 116 with the elastic piece 110 in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a recovery treatment method for electrodes. The transfer surface 10s of the transfer plate 10 having the transfer surface 10 having a predetermined roughness is brought into contact with the contact piece 44 formed on the base material 44M having a linear expansion coefficient larger than that of the transfer plate 10 under a predetermined pressure The bumps 44B are formed, and the base material 44M and the replication plate 10 are heated to a predetermined temperature, so that the connection surface of the bumps 44B is restored to a surface with a predetermined roughness.

Description

[0001] This application is a divisional application of the patent application for invention with the application number 03138409.9. The filing date of the parent application is May 27, 2003, and the title of the invention is "Method for recovering electrodes". technical field [0002] The present invention relates to an electrode recovery treatment method capable of restoring the electrode portion connection surface of an electrode plate having an electrode portion electrically connected to a terminal of a semiconductor device to a predetermined surface roughness. Background technique [0003] In IC sockets and connectors for electronic equipment, it is generally desirable to reliably electrically connect terminals of semiconductor devices mounted on electrodes of wiring substrates. In such a device, for example, as disclosed in Japanese Patent Application Laid-Open No. 8-96865 and Japanese Patent Laid-Open No. 2000-294043, an electric contact part or a conductive path electr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60H05K3/32
Inventor 铃木威之若林良典
Owner YAMAICHI ELECTRONICS