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Method and apparatus for preparing crystal

A technology for manufacturing devices and manufacturing methods, applied in the field of crystallization manufacturing methods and devices

Inactive Publication Date: 2006-10-04
NIPPON TELEGRAPH & TELEPHONE CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the supplementary raw material is supplied without heat treatment, the above-mentioned 3rd and 4th problems will arise

Method used

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  • Method and apparatus for preparing crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Figure 5 A crystal production apparatus for the crystal of Example 1 of the present invention is shown. Indicates that according to the vertical Bridgman method, making a large KTa x Nb 1-x o 3 (0≤x≤1) The case of crystallization. In the crystal production apparatus, a funnel-shaped reflector plate 20 is provided above the crucible 11 to liquefy the replenishment raw material 19 supplied from the raw material supply device 18 and drop it into the crucible 11 as a liquid raw material 21 after performing a slow heat treatment.

[0048] First, raw materials with a ratio of K:Ta:Nb=50:25:25 were produced from potassium carbonate, tantalum oxide, and niobium oxide, and the raw materials weighing 500 g were filled into a crucible 11 with a diameter of 2 inches, and kept in a crystallization furnace. The temperature in the crystal production furnace is raised to form a temperature profile 15 where the temperature of the upper part of the crucible 11 is higher than the tem...

Embodiment 2

[0057] Figure 7 A crystallization production apparatus for crystallization in Example 2 of the present invention is shown. Denotes that according to the vertical Bridgman method, make a long KTa x Nb 1-x o 3 (0≤x≤1) The case of crystallization. In the crystal production apparatus, a funnel-shaped reflector plate 20 is provided above the crucible 11 to liquefy the replenishment raw material 19 supplied from the raw material supply device 18 and drop it into the crucible 11 as a liquid raw material 21 after heat treatment.

[0058] First, a raw material with a ratio of K:Ta:Nb=50:25:25 was prepared from potassium carbonate, tantalum oxide, and niobium oxide, and the raw material weighing 500 g was filled into a crucible 11 with a diameter of 2 inches, and kept in a crystallization furnace. The temperature in the crystal production furnace is raised to form a temperature profile 15 where the temperature of the upper part of the crucible 11 is higher than the temperature of t...

Embodiment 3

[0065] Figure 8 A crystallization production apparatus for crystallization in Example 3 of the present invention is shown. Denotes that according to the vertical Bridgman method, making KTa x Nb 1-x o 3 (0≤x≤1) The case of crystallization. In the crystal manufacturing apparatus, a horn-shaped reflector plate 22 is provided above the crucible 11, which liquefies the replenishment raw material 19 supplied from the raw material supply device 18, and drops it into the crucible 11 as a liquid raw material 21 after heat treatment.

[0066]First, a raw material with a ratio of K:Ta:Nb=50:25:25 was prepared from potassium carbonate, tantalum oxide, and niobium oxide, and the raw material with a weight of 500 g was filled in a crucible 11 with a diameter of 3 inches, and kept in a crystallization furnace. The temperature in the crystal production furnace is raised to form a temperature profile 15 in which the temperature of the upper part of the crucible 11 is higher than the temp...

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Abstract

A method and apparatus for preparing a crystal allows the maintenance of the quality of the crystal and the retention of the uniform composition of the crystal, from the initial stage to the final stage of the crystal growth. A raw material (12) in a crucible (11) held in a furnace is liquefied by heating and the raw material (12) is slowly cooled from the lower portion toward the upper portion of the crucible, to thereby grow a crystal (13), which further comprises a raw material supplying device (18) for supplying a raw material for replenishment, and a reflecting plate (20) provided above the crucible (11) for liquefying the raw material (19) for replenishment supplied from a device (18) for supplying a raw material and allowing it to fall into the crucible as a liquid raw material (21).

Description

[0001] technology area [0002] The present invention relates to a crystal manufacturing method and device, and more specifically, to a crystal manufacturing method and device for producing large-scale high-quality crystals based on vertical Bridgman method, vertical temperature gradient solidification method, and the like. Background technique [0003] Conventionally, as a method for producing crystals, a method of bringing seed crystals into contact with the surface of a previously liquefied raw material and lowering the temperature of the liquefied raw material to grow crystals using the seed crystals as nuclei is well known. Among such methods, the "TSSG (Top-Seeded-Solution-Growth) method" (for example, refer to Patent Document 1) for growing crystals from a solution, and the "crystal pulling method" for growing crystals from a melt (for example, , refer to case literature 2). In any method, in order to control the crystal diameter, that is, the amount of crystal growth,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/04C30B11/00C30B35/00
CPCC30B11/04C30B35/00C30B11/001C30B29/30Y10T117/1024Y10T117/1052Y10T117/1056Y10T117/1092C30B11/08G02F1/13G02F1/136
Inventor 笹浦正弘香田扩树藤浦和夫小林隆今井钦之栗原隆
Owner NIPPON TELEGRAPH & TELEPHONE CORP
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