Method of manufacturing a semiconductor device

Abstract

The invention relates to a method of manufacturing a semiconductor device, in which a substrate is provided, a dielectric layer is formed on top of the substrate, an amorphous semiconductor layer id deposited on top of the dielectric layer, the amorphous semiconductor layer is doped, and a high temperature step to the amorphous layer is applied to form a crystallized layer out of the amorphous semiconductor.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device and a semiconductor device manufactured by the method. Background technique [0002] Although the invention can in principle be applied to any desired integrated circuit, the invention and its potential problems will hereafter be described with reference to a gate stack. [0003] Active semiconductor structures with field effect transistors are widely used in electrical circuits. The necessary gate structure is typically provided with a vertical gate stack over the gate channel in the substrate 51, such as image 3 shown. The gate stack comprises, in the following order, an isolation layer 52 forming a gate dielectric layer; a heavily doped semiconductor layer 53 for applying an electric field within the substrate 1 to the underlying gate channel through the gate dielectric layer; Intermediate layers 54, 55 to prevent diffusion and provide a good adhesion interface for ...

AI Technical Summary

Problems solved by technology

[0005] Disadvantageously, semiconductor devices using the above gate stack have high leakage current from the gate stack into the substrate

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