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Buried conductors

a conductor and conductor technology, applied in the field of buried conductors, can solve the problems of not being entirely applicable to current semiconductor technology, reducing the connection has significantly reduced the usefulness of the lower level, so as to reduce the average distance from one segment, faster processors, and high-density semiconductor storage devices.

Inactive Publication Date: 2006-02-16
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach enables the creation of higher-density semiconductor storage devices and faster processors by reducing the average distance between components, facilitating more efficient internal connections within semiconductor structures.

Problems solved by technology

As the number of wiring levels grew, the requirement of the vertical connections has significantly reduced the usefulness of the lower levels.
A limited prior art solution is to use a single buried wiring level in the initial phases of semiconductor fabrication.
A single buried wiring level overcomes the limitations of using external wiring planes, but is not entirely applicable to current semiconductor technology.

Method used

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Examples

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Embodiment Construction

[0016] In the following detailed description of exemplary embodiments of the invention, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific exemplary embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that logical, mechanical, electrical and other changes may be made without departing from the spirit or scope of the present invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims.

[0017] The detailed description is divided into five sections. In the first section, exemplary structures having buried conductors are described. In the second section, a method by which buried conductors may be formed according to ...

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Abstract

Buried conductors within semiconductor devices and structures, and methods for forming such conductors, are disclosed. In one embodiment of the invention, a semiconductor structure includes a substrate and a plurality of conductive elements buried within the substrate. The conductive elements may be metal, such as tungsten or a tungsten alloy. The invention described in the disclosure provides for advantages including formation of three-dimensional

Description

RELATED APPLICATION [0001] The present application is a continuation of U.S. application Ser. No. 10 / 705,185, filed on Nov. 11, 2003; which is a divisional of U.S. application Ser. No. 09 / 069,326, filed on Apr. 29, 1998; each of which is incorporated herein by reference. [0002] This application is related to cofiled, and coassigned application entitled “Hi Q Inductive Elements”, U.S. application Ser. No. 09 / 069,346, now issued as U.S. Pat. No. 6,025,261.FIELD OF THE INVENTION [0003] This invention relates generally to semiconductor technology, and more particularly to buried conductors within semiconductor devices and structures, and methods for forming such conductors. BACKGROUND OF THE INVENTION [0004] Semiconductor technology pervades most electronic devices today. Computers, televisions, videocassette recorders, cameras, etc., all use semiconductor integrated circuits to varying degrees. For example, the typical computer includes microprocessors and dedicated controller integrat...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/00H01L21/768H01L23/535
CPCH01L21/743H01L21/76898H01L23/535H01L2223/54453H01L2924/0002H01L2924/00
Inventor FARRAR, PAUL A.NOBLE, WENDELL P.
Owner MICRON TECH INC
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