Threshold voltage modulation through channel length adjustment
a technology of threshold voltage and channel length adjustment, which is applied in the direction of transistors, electrical devices, semiconductor devices, etc., can solve the problems of difficult formation of individual components and electrical contacts
Active Publication Date: 2018-03-22
INT BUSINESS MASCH CORP
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Benefits of technology
The present invention provides a method for making an arrangement of long and short fins on a substrate, where the length of the fins ranges from 180 nm to 350 nm, and where one or more long fins are adjacent to one or more short fins. The arrangement can also include short fins with a length ranging from 60 nm to 140 nm and long fins with a threshold voltage ranging from 450 mV to 280 mV. The technical effect of the invention is to provide a flexible way to create an arrangement of different fins on a substrate for use in semiconductor devices.
Problems solved by technology
With ever decreasing device dimensions, forming the individual components and electrical contacts become more difficult.
Method used
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[0017]Principles and embodiments of the present disclosure relate generally to the formation of one or more vertical fins having a predetermined length to obtain an intended threshold voltage for the finished fin field effect transistor (finFET) device. The value for the threshold voltage can be correlated to the length of the fin, as well as an induced strain that can affect charge mobility and / or band gap. A change in fin length can directly affect the electrical characteristics of the finished finFET device, where a longer fin length can correspond to a lower threshold voltage, Vt, and a comparably shorter fin length can correspond to a higher Vt.
[0018]Principles and embodiments of the present disclosure also relate generally to determining a threshold voltage resulting from a finFET having a particular length and material composition, and laying out the fin fabrication to have the predetermined length to achieve the intended voltage. Providing a fin with a comparably longer leng...
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A method of forming an arrangement of long and short fins on a substrate, including forming a plurality of finFET devices having long fins on the substrate, where the long fins have a fin length in the range of about 180 nm to about 350 nm, and forming a plurality of finFET devices having short fins on the substrate, where the short fins have a fin length in the range of about 60 nm to about 140 nm, wherein at least one of the plurality of finFET devices having a long fin is adjacent to at least one of the plurality of finFET devices having a short fin.
Description
BACKGROUNDTechnical Field[0001]The present invention generally relates to varying the threshold voltage of a fin field effect transistor (finFET) by adjusting the fin length, and more particularly to controlling the finFET device threshold voltage by configuring the fin dimensions to have a predetermined length corresponding to the intended threshold voltage.Description of the Related Art[0002]A Field Effect Transistor (FET) typically has a source, a channel, and a drain, where current flows from the source to the drain, and a gate that controls the flow of current through the channel. Field Effect Transistors (FETs) can have a variety of different structures, for example, FETs have been fabricated with the source, channel, and drain formed in the substrate material itself, where the current flows horizontally (i.e., in the plane of the substrate), and finFETs have been formed with the channel extending outward from the substrate, but where the current also flows horizontally from a...
Claims
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IPC IPC(8): H01L27/11H01L29/78H01L27/088H01L21/8258H01L21/8234H01L27/02H10B10/00H10B41/41
CPCH01L27/1104H01L29/7842H01L27/1116H01L27/0207H01L29/785H01L21/8258H01L21/823431H01L27/0886H01L21/823412H01L29/0847H01L29/1054H01L27/0924H10B10/18H10B41/41H01L29/66795H01L29/7855H01L29/42376
Inventor BAO, RUQIANGGUO, DECHAOLIU, DERRICKZHOU, HUIMEI
Owner INT BUSINESS MASCH CORP