Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications

a technology of resistance area and capping layer, which is applied in the field of magnetic devices, can solve the problems of reducing the overall mr of the structure, and it is difficult to reduce the ra of the oxide layer without also reducing hk, so as to improve the induced perpendicular anisotropy of the free layer, reduce the thickness of the oxide layer, and improve the effect of reducing the ra of the oxidized layer

Active Publication Date: 2019-09-19
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The method effectively reduces the RA product, maintains high Hc and Hk values, and improves compatibility with high-density PMA spin-torque MRAM fabrication requirements, ensuring enhanced thermal stability and magnetic properties.

Problems solved by technology

Since this magnesium oxide layer contributes to the resistance of the stack, it reduces the overall MR of the structure.
Unfortunately, the perpendicular anisotropy induced at the interface between the free layer and the capping layer is directly proportional to the oxidation state of the interface, which makes it difficult to reduce the RA of the oxide layer without also reducing Hk.

Method used

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  • Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications
  • Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications
  • Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications

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Embodiment Construction

[0032]Preferred embodiments of the present disclosure provide a series of improvements over the previous method illustrated in FIGS. 1 (a)-1 (c). The improvements will be seen in terms of an improved oxygen concentration profile of the MgO and (exemplary) CoFeB layers. It is noted that the process to be described herein could also be applied using oxides of elements chosen from the group consisting of Si, Ba, Ca, La, Mn, Zn, Hf, Ta, Ti, B, Cu, Cr, V and Al. In addition, the process to be described below could be carried out using nitrides of the same group of elements, if a nitride capping layer is to be used in place of an oxide layer.

[0033]Referring next to FIG. 2 (a), there is shown schematically a first aspect of a preferred embodiment of the present disclosure, which is to smooth the (exemplary) CoFeB free layer (20) surface (22) with a plasma treatment (as indicated schematically by the arrows (200)) before the metal deposition on that surface.

[0034]Referring next to FIG. 2(b)...

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Abstract

A ferromagnetic layer is capped with a metallic oxide (or nitride) layer that provides a perpendicular-to-plane magnetic anisotropy to the layer. The surface of the ferromagnetic layer is treated with a plasma to prevent diffusion of oxygen (or nitrogen) into the layer interior. An exemplary metallic oxide layer is formed as a layer of metallic Mg that is plasma treated to reduce its grain size and enhance the diffusivity of oxygen into its interior. Then the plasma treated Mg layer is naturally oxidized and, optionally, is again plasma treated to reduce its thickness and remove the oxygen rich upper surface.

Description

PRIORITY DATA[0001]The present application is a divisional application of U.S. patent application Ser. No. 13 / 441,158, filed Apr. 6, 2012, entitled “Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications”, which is herein incorporated by reference in its entirety.RELATED PATENT APPLICATION[0002]This application is related to Docket No. HMG10-038, Ser. No. 12 / 931,866, filing date Feb. 11, 2011 and to Docket No. HMG10-039, Ser. No. 13 / 068,172 filing date May 4, 2011, assigned to the same assignee as the current invention and fully incorporated herein by reference.BACKGROUND1. Technical Field[0003]This disclosure relates generally to magnetic devices that utilize thin film magnetic layers with out-of-plane magnetic anisotropy, and more specifically, to methods for reducing the resistance-area product of individual layers without reducing the overall magnetoresistance of the device.2. Description of the Related Art[0004]Many present day magnetic devices util...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L43/12H01F41/30H01F10/32H01L43/08H10N50/01H10N50/10
CPCH01F10/3286H01L43/08H01F41/308G11C11/161H01F10/329H01L43/12H10N50/10H10N50/01
InventorJAN, GUENOLETONG, RU-YING
OwnerTAIWAN SEMICON MFG CO LTD