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Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure

a technology of surface modifying agent and laminated structure, which is applied in the direction of group 3/13 element organic compounds, natural mineral layered products, nuclear engineering, etc., can solve the problems of difficult to provide a fine pattern, complicated solution process, and low energy and material efficiency,

Active Publication Date: 2013-02-12
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the photolithography is a complicated process and needs to be carried out in a clean room, there are problems of lower efficiency in terms of energy and material, and higher costs.
However, the solution process may be a complicated process and difficult to provide a fine pattern.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

Manufacturing Laminated Structure

[0216]A silicon oxide layer may be formed on a surface of a silicon wafer (Si wafer) in accordance with heat treatment. The silicon oxide layer has a thickness of 300 Å.

[0217]The silicon wafer formed with silicon oxide layer may be immersed in a solution in which 400 μl 7-octynyltrichlorosilane may be dissolved in 200 ml of hexane, for 20 minutes. As a result, a self-assembled monolayer of a 7-octynyl trichlorosilyl group may be formed on the silicon oxide layer of the silicon wafer.

[0218]The silicon wafer formed with the self-assembled monolayer may be subjected to H2 plasma treatment using a mask. On the exposure region treated with H2 plasma, the terminal ethynyl group may be transferred mostly to an ethyl group and partially to an ethenyl group.

[0219]FIG. 9 shows Raman spectra before and after the H2 plasma treatment. In FIG. 9, A refers to the Raman spectrum before the plasma treatment, and B refers to the Raman spectrum after the plasma treatme...

example 2

Manufacturing Copper (Cu)-Deposited Laminated Structure

[0222]Copper (Cu) may be deposited on a self-assembled monolayer including a 1,2,3-triazole group of the silicon wafer obtained from Example 1 at a deposition speed of 1.0 Å / sec according to a thermal evaporation method. The copper (Cu) has a deposition thickness of 700 Å. Thereby, a copper (Cu)-deposited laminated structure may be provided.

example 3

Manufacturing Transistor Using Copper (Cu)

[0225]A copper (Cu)-deposited laminated structure may be manufactured in accordance with the same processes as in Examples 1 and 2, except that silicon doped with phosphorus (P) may be deposited on a part of a silicon wafer (Si wafer) before a silicon oxide layer may be formed on the surface of the silicon wafer. A transistor having the structure shown in FIG. 7 may be manufactured by evaporating pentacene on the region without deposited copper (Cu) in the laminated structure.

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Abstract

Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority under U.S.C. §119 to Korean Patent Application No. 10-2009-0010965, filed in the Korean Intellectual Property Office (KIPO) on Feb. 11, 2009, the entire contents of which are incorporated herein by reference.BACKGROUND[0002]1. Field[0003]Example embodiments relate to a surface modifying agent, a laminated structure and transistor including the same, and a method of manufacturing the laminated structure.[0004]2. Description of the Related Art[0005]Recently, a method of fabricating a microdevice, e.g., a semiconductor device, an integrated circuit, or an organic electro-luminescence display device, has been performed by providing a thin film with a functional material on a substrate in accordance with evaporation, sputtering, and patterning the thin film in accordance with photolithography.[0006]Photolithography may be generally performed by forming a thin film of material for patterning on a substrate; formi...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L29/72
Inventor PARK, JEONG-ILYOO, BYUNG-WOOKKIM, DO-HWANLEE, SANG-YOONLEE, BANG-LINJEONG, EUN-JEONG
Owner SAMSUNG ELECTRONICS CO LTD