Light emitting diode
a technology of light-emitting diodes and leds, which is applied in the direction of basic electric elements, electrical equipment, and semiconductor devices, can solve the problems of low extraction efficiency and degrading extraction efficiency of leds
Active Publication Date: 2014-08-05
TSINGHUA UNIV +1
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Benefits of technology
[0022]Referring to FIG. 1 and FIG. 2, the second surface of the first semiconductor layer 110 is a patterned surface. The first semiconductor layer 110 can be separated into a main body 110a and a protruding part 110b and distinguished by an “interface.” The interface can be parallel with the first surface of the first semiconductor layer 110. The interface is configured as a surface of the main body 110a, and the protruding part 110b is extending away from the interface. The protruding part 110b defines the plurality of three-dimensional nano-structures 113, and the plurality of three-dimensional nano-structures 113 form the patterned surface of the first semiconductor layer 110. The three-dimensional nano-structure 113 can be a protruding structure. The protruding structure protrudes out from the interface of the main body 110a. The plurality of three-dimensional nano-structures 113 is a protruding structure located on the interface of the main body 110a.
Problems solved by technology
However, the extraction efficiency of LEDs is low because the contact area between the N-type semiconductor layer and the active layer is not large enough.
Thus the electron-hole recombination density is low, and the photons in the LED are sparse, thereby degrading the extraction efficiency.
Method used
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[0019]The disclosure is illustrated by way of example and not by way of limitation in the figures of the accompanying drawings in which like references indicate similar elements. It should be noted that references to “an” or “one” embodiment in this disclosure are not necessarily to the same embodiment, and such references mean at least one.
[0020]Referring to FIG. 1, an LED 10 includes a first semiconductor layer 110, an active layer 120, a second semiconductor layer 130, a first electrode 112, and a second electrode 132. The first semiconductor layer 110 defines a plurality of three-dimensional nano-structures 113. The active layer 120 is sandwiched between the first semiconductor layer 110 and the second semiconductor layer 130. The first semiconductor layer 110 includes a first surface and a second surface opposite to the first surface. The active layer 120 and the second semiconductor layer 130 are stacked on the second surface of the first semiconductor layer 110. The first ele...
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A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims all benefits accruing under 35 U.S.C. §119 from China Patent Application No. 201110395467.7, filed on Dec. 3, 2011 in the China Intellectual Property Office, disclosure of which is incorporated herein by reference. This application is related to applications entitled, “LIGHT EMITTING DIODE”, filed May 23, 2012 Ser. No. 13 / 479,223; “LIGHT EMITTING DIODE”, filed May 23, 2012 Ser. No. 13 / 479,225; “LIGHT EMITTING DIODE”, filed May 23, 2012 Ser. No. 13 / 479,227; “METHOD FOR MAKING LIGHT EMITTING DIODE”, filed May 23, 2012 Ser. No. 13 / 479,229; “LIGHT EMITTING DIODE”, filed May 23, 2012 Ser. No. 13 / 479,230; “METHOD FOR MAKING LIGHT EMITTING DIODE”, filed May 23, 2012 Ser. No. 13 / 479,232 ; “METHOD FOR MAKING LIGHT EMITTING DIODE”, filed May 23, 2012 Ser. No. 13 / 479,234; “LIGHT EMITTING DIODE”, filed May 22, 2012 Ser. No. 13 / 477,273.BACKGROUND[0002]1. Technical Field[0003]The present disclosure relates to a light emitting di...
Claims
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IPC IPC(8): H01L33/00
CPCH01L33/24H01L33/005
Inventor ZHU, ZHEN-DONGLI, QUN-QINGZHANG, LI-HUICHEN, MOFAN, SHOU-SHAN
Owner TSINGHUA UNIV