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Silicon wafer high speed transport method and system capable of implementing multi-position processing

A high-speed transmission, multi-station technology, applied in the direction of conveyor objects, transportation and packaging, etc., can solve the problems of silicon wafer transmission robot research and development and manufacturing cost increases, achieve a good development space, reduce development costs, and reduce floor space Effect

Inactive Publication Date: 2009-06-24
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the rapid development of the IC industry, the requirements for increasing the size of silicon wafers and improving production efficiency have emerged, and the requirements for the movement speed, work space and motion stability of silicon wafer transfer robots are getting higher and higher. In order to meet these requirements The research and development and manufacturing costs of silicon wafer transfer robots are also increasing

Method used

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  • Silicon wafer high speed transport method and system capable of implementing multi-position processing
  • Silicon wafer high speed transport method and system capable of implementing multi-position processing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (a) Place the silicon wafer on the silicon wafer carrier and send the silicon wafer carrier to the turntable in the wafer output station, the movement radius of the silicon wafer carrier is 200mm;

[0031] (b) increasing the rotating speed of the turntable in the film output station to 72 rpm, so that the silicon wafer carrier can obtain a speed of 1.5m / s driven by the turntable in the film output station;

[0032] (c) The silicon wafer carrier enters the transfer track through the transfer interface between the turntable in the wafer output station and the transfer track, and moves toward the turntable in the first station at a speed of 1.5 m / s. The length of the transmission track horizontally arranged between the turntable in the film output station and the turntable in the first station is 1m, and the silicon wafer carrier is placed 0.25m before entering the turntable in the first station. The coefficient of friction with the transmission track is increased from 0.0...

Embodiment 2

[0035] (a) Place the silicon wafer on the silicon wafer carrier and send the silicon wafer carrier to the turntable in the wafer output station, the movement radius of the silicon wafer carrier is 200mm;

[0036] (b) The turntable in the film output station is accelerated to rotate to 144 rpm, so that the silicon wafer carrier can obtain a speed of 3m / s under the drive of the turntable in the film output station;

[0037](c) The silicon wafer carrier enters the transfer track through the transfer interface between the turntable in the wafer output station and the transfer track, and moves toward the turntable in the first station at a speed of 3 m / s. The length of the transmission track horizontally arranged between the turntable in the film output station and the turntable in the first station is 2m, and the silicon wafer carrier is placed 0.8m before entering the turntable in the first station. The coefficient of friction with the transmission track is increased from 0.05 to...

Embodiment 3

[0040] (a) Place the silicon wafer on the silicon wafer carrier and send the silicon wafer carrier to the turntable in the sheet output station, the movement radius of the silicon wafer carrier is 150mm;

[0041] (b) increasing the rotating speed of the turntable in the film output station to 76 rpm, so that the silicon wafer carrier can obtain a speed of 1.2m / s driven by the turntable in the film output station;

[0042] (c) The silicon wafer carrier enters the transfer track through the transfer interface between the turntable in the wafer output station and the transfer track, and moves toward the turntable in the first station at a speed of 1.2 m / s. The length of the transmission track arranged horizontally between the turntable in the film output station and the turntable in the first station is 0.8m, and the silicon wafer is carried at 0.15m before entering the turntable in the first station. The friction coefficient between the carrier and the transport track is increas...

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Abstract

The invention discloses a silicon chip high-speed transmission method and a transmission system that can realize multi-station processing. The method includes the following steps: (a) placing the silicon chip on a silicon chip carrier, and sending the silicon chip carrier to to the turntable in the film output station; (b) adjust the rotating speed of the turntable in the film output station, so that the silicon wafer carrier obtains the first predetermined speed under the drive of the turntable in the film output station; (c) The silicon wafer carrier moves toward the turntable in the first station, and enters the turntable in the first station from the transfer interface between the transport track and the turntable in the first station at a second predetermined speed, and then is sent to the turntable in the first station. One station processing; (d) After the silicon wafer is processed at the first station, repeat the steps (a)-(c) and transfer to the next station until the silicon wafer reaches the receiving station. The production efficiency of the method and system of the invention is significantly improved; it can adapt to silicon wafers of various specifications and sizes, and makes the silicon wafers easy to realize high-speed transmission.

Description

technical field [0001] The invention relates to a transmission equipment and a corresponding transmission method in an IC manufacturing process flow, in particular to a high-speed silicon chip transmission method and system capable of realizing multi-station processing. Background technique [0002] At present, in the domestic silicon wafer manufacturing process, the transfer of silicon wafers between each station is realized by various transmission robot equipment, and all technical requirements in silicon wafer transmission are almost entirely dependent on the working performance and motion quality of the transfer robot. . With the rapid development of the IC industry, the requirements for increasing the size of the silicon wafer and improving the production efficiency have emerged, and the requirements for the movement speed, work space and motion stability of the silicon wafer transfer robot are getting higher and higher. In order to meet these requirements The research...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/677
Inventor 王多倪雁冰杨志永
Owner TIANJIN UNIV
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