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Organic thin film transistor

An organic thin film and transistor technology, applied in the field of organic thin film transistors, can solve problems such as the inability to display high-resolution images

Active Publication Date: 2009-12-23
SAMSUNG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, when flat panel displays are fabricated using organic TFTs formed by spin coating, high-resolution images cannot be displayed according to image input signals

Method used

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  • Organic thin film transistor
  • Organic thin film transistor
  • Organic thin film transistor

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Embodiment Construction

[0072] Some embodiments of the present invention will now be described more fully with reference to the accompanying drawings, in which embodiments of the invention are shown. The embodiments presented here are presented in numerical order. This is done for clarity purposes only and is not intended to limit the invention to the scope of the presented embodiments.

[0073] Referring to FIGS. 4 and 5, an embodiment of an organic TFT includes a gate electrode 120, a gate insulating film 160 covering the gate electrode 120, an organic semiconductor layer 130 formed on the gate insulating film 160, and an organic semiconductor layer in contact with the organic semiconductor layer 130. Source and drain electrodes 140 and 150 and substrate 110 . In general, the gate electrode 120 and the gate insulating film 160 are disposed over and in contact with the substrate 110 . In some embodiments, the organic TFT may further include a buffer layer (not shown) to prevent impurities from pen...

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Abstract

Organic TFTs having uniform characteristics and a flat panel display having the organic TFT, wherein the organic TFTs include an organic semiconductor layer formed by spin coating are disclosed. One embodiment of the organic TFT includes: a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, an organic semiconductor layer disposed on the gate insulating film, and a source electrode and a drain electrode that contact the organic semiconductor layer, wherein a plurality of protrusion parts is formed on the gate insulating film and the protrusion parts extend toward the drain electrode from the source electrode.

Description

[0001] This application claims priority from Korean Patent Application No. 2004-0093000 filed in the Korean Intellectual Property Office on Nov. 15, 2004, the entire disclosure of which is hereby incorporated by reference. technical field [0002] The present application relates to an organic thin film transistor (organic TFT). Background technique [0003] The development of polyacetylene, a conjugated organic polymer with semiconducting properties, opened up the possibility of using organic polymer transistors in electrical and optical devices. The advantages of organic polymers are that they can be synthesized using various methods, can be easily molded into films, have excellent flexibility and electrical conductivity, and are inexpensive to produce. [0004] A conventional silicon TFT includes a semiconductor layer formed of silicon, a source region and a drain region doped with a high-concentration dopant, a channel region between the source region and the drain region...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H10N10/856
CPCH01L51/0096H01L51/0545H01L51/0021H01L51/0003H01L51/0541H01L27/283H01L51/0516Y02E10/549Y02P70/50H10K19/10H10K71/12H10K71/60H10K77/10H10K10/468H10K10/464H10K10/466
Inventor 徐旼彻具在本安泽
Owner SAMSUNG DISPLAY CO LTD