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Preparing method for RRAM to avoid forming phenomenon using CuxO as storage medium

A storage medium and phenomenon technology, applied in the field of microelectronics, can solve the problem that the floating gate cannot be thinned

Inactive Publication Date: 2007-10-10
FUDAN UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, due to the requirement of storing charges, the floating gate of FLASH cannot be thinned without limitation with the development of technology generation. It is reported that the limit of FLASH technology is around 32nm, which forces people to look for the next generation of non-volatile memory with better performance.

Method used

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  • Preparing method for RRAM to avoid forming phenomenon using CuxO as storage medium
  • Preparing method for RRAM to avoid forming phenomenon using CuxO as storage medium

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Embodiment Construction

[0018] 1 and 2 are cross-sectional views according to one embodiment of the present invention. Figure 1 is Cu x The O storage medium 304 is directly below the through hole 197, and FIG. 2 is Cu x O The storage medium 304 is directly above the through hole 197. Wherein the lower dielectric layer 191a is formed on the semiconductor substrate (hereinafter referred to as the substrate), the lower plug 198 is patterned on the 191a and then etched until it penetrates 191a, exposing a predetermined area of ​​the substrate, the lower dielectric layer 191a can be doped Silicon oxide layer, such as phosphorus or boron doped silicon oxide (BPSG) or phosphorus doped silicon oxide (PSG).

[0019] The lower plug 198 may be a conductive material, such as W, heavily doped polysilicon, or a conductive material containing N, such as TiN.

[0020] A cap layer 195 a , an insulating dielectric layer 191 b , an etching stop layer 195 b , and an insulating dielectric layer 191 c are covered seque...

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Abstract

In RRAM procedure of preparing storage medium of CuxO according to conventional technique, and after storage medium of CuxO film is completed, the method makes the CuxO film contact the stable solution of containing hydroxylamine component for 10-30 minutes to reduce CuO component in thin film to Cu2O. Thus, before use, the device does not need of a voltage activation process with voltage higher than voltage higher of normal operation, i.e. preventing forming phenomena.

Description

field of invention [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for avoiding the forming phenomenon of an RRAM using CuxO as a storage medium. Background of the invention [0002] Memory occupies an important position in the semiconductor market. Due to the continuous popularization of portable electronic devices, the share of non-volatile memory in the entire memory market is also increasing, of which more than 90% of the share is occupied by FLASH. However, due to the requirement of storing charges, the floating gate of FLASH cannot be thinned without limit with the development of technology generation. It is reported that the limit of FLASH technology is around 32nm, which forces people to look for the next generation of non-volatile memory with better performance. Recently, resistive random access memory (RRAM, resistive random access memory) has attracted great attention because of its high density, low c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 林殷茵傅秀峰陈邦明
Owner FUDAN UNIV
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