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Microelectromechanical device with chambers and piezoelectric islands and a method of forming a device with a piezoelectric transducer

A technology of micro-electromechanical devices and transducers, which is used in the manufacture/assembly of piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, and piezoelectric/electrostrictive devices

Active Publication Date: 2010-08-18
FUJIFILM DIMATIX
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Forming uniform structures becomes challenging when trying to process individual structures to have measurements within a few micrometers of other structures within the MEMS

Method used

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  • Microelectromechanical device with chambers and piezoelectric islands and a method of forming a device with a piezoelectric transducer
  • Microelectromechanical device with chambers and piezoelectric islands and a method of forming a device with a piezoelectric transducer
  • Microelectromechanical device with chambers and piezoelectric islands and a method of forming a device with a piezoelectric transducer

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Embodiment Construction

[0043] A method of forming a MEMS comprising structures each having a piezoelectric actuator is described. As shown in FIGS. 1A , 1B and 1C , a MEMS device 100 has a body 200 supporting a piezoelectric actuator 104 with a plurality of transducer structures 110 . The body 200 has a cavity 205 formed in the material layer. The cavity 205 may be closed from the external atmosphere, such as in a pressure transducer, or open to the external atmosphere, such as to eject a fluid. The body 200 may be a single layer of a single material. Alternatively, the body 200 may be constructed of multiple layers bonded together, the layers being formed of a single material or multiple materials.

[0044]The piezoelectric driver 104 may include a top electrode 106 , a piezoelectric layer 109 and a bottom electrode 112 . The piezoelectric driver 104 may include a diaphragm 118 formed on the cavity 205 . Diaphragm 118 may isolate cavity 205 from piezoelectric layer 109 . In one implementation,...

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PUM

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Abstract

Microelectromechanical systems with structures having piezoelectric actuators (104) are described. A plurality of piezoelectric islands is supported by a body (200) having a plurality of chambers (205). The piezoelectric can be formed, in part, by forming cuts (145) into a thick layer of piezoelectric material temporarily bondes to a handle substrate, attaching the cut piezoelectric layer (107) to a body (200) having etched features and grinding the piezoelectric layer to a thickness that is less than the depths of the cuts (140). Conductive material (158, 210) can be formed on the piezoelectric layer to form electrodes (106, 112).

Description

technical field [0001] The present invention relates to forming piezoelectric actuators for microelectromechanical devices. Background technique [0002] Piezoelectric materials can generate electricity or electrical polarity when subjected to mechanical stress. Alternatively, applying a voltage to a piezoelectric material may result in converse piezoelectricity, ie, the piezoelectric material mechanically deforms when a voltage is applied. Inverse piezoelectricity can lead to extremely high bending forces within piezoelectric materials. Both properties of generating electricity and converse piezoelectricity are constrained for use in electronic and mechanical devices such as transducers such as actuators and sensors. Multiple transducers, including combinations of drivers and sensors, can be grouped together into microelectromechanical systems (MEMS). [0003] MEMS typically have mechanical structures formed within a semiconductor substrate using conventional semiconduct...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B41J2/14H01L41/22B41J2/16H01L41/09
CPCB41J2/161H01L41/338B41J2/1632H01L41/313H01L41/337H01L41/0973B41J2/1629B41J2/14233H10N30/2047H10N30/073H10N30/086H10N30/088H10N30/20
Inventor 安德列亚斯·拜布尔约翰·A·希金森克里斯托弗·门泽尔保罗·A·霍伊辛顿
Owner FUJIFILM DIMATIX