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Light emitting transistor

A technology of light-emitting transistors and emitter layers, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as transistor research without light-emitting

Inactive Publication Date: 2007-12-12
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, almost no research has ever been done on transistors for light emission

Method used

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  • Light emitting transistor
  • Light emitting transistor

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Embodiment Construction

[0022] Embodiments of the present general inventive concept will now be described in detail, examples of which are illustrated in the accompanying drawings, and like reference numerals refer to like elements throughout. The embodiments are described below in order to explain the present general inventive concept by referring to the figures. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

[0023] Hereinafter, a light emitting transistor according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 5 .

[0024] 1 is a plan view showing the structure of a light emitting transistor according to an embodiment of the present invention, and FIGS. 2 to 4 are cross-sectional views taken along line I-I' of FIG. 1 .

[0025] As shown in FIGS. 1 and 2, the light emitting transistor according to the present invention basically has a bipolar junction structure.

[0026] That is to say, the light-emitting t...

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Abstract

A light emitting transistor comprises a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on a predetermine region of the collector layer; a collector electrode formed on the collector layer where the base layer is not formed; a first conductivity-type emitter layer formed on a predetermine region of the base layer; a base electrode formed on the base layer where the emitter layer is not formed; an emitter electrode formed on the emitter layer; a first activation layer formed between the collector layer and the base layer; and a second activation layer formed between the base layer and the emitter layer.

Description

[0001] Related Application Cross Reference [0002] This application claims the benefit of Korean Patent Application No. 10-2006-0051214 filed with the Korean Intellectual Property Office on June 8, 2006, the disclosure of which is hereby incorporated by reference. technical field [0003] The present invention relates to a light emitting transistor which can simultaneously obtain optical characteristics and electrical characteristics. Background technique [0004] In general, a light emitting diode (LED) generates minority carriers (electrons or holes) injected by using a semiconductor p-n junction structure, and recombines the minority carriers to emit light. In other words, if a forward voltage is applied to a specific element of the semiconductor, electrons and holes recombine while passing through the junction between the positive and negative electrodes. Since the energy in this state is smaller than that in a state where electrons and holes are separated, light is em...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/28H01L33/30
CPCH01L33/0004
Inventor 文元河崔昌焕黄永南
Owner SAMSUNG ELECTRO MECHANICS CO LTD