Bi-synthesizing inverse iron magnetic structure film material
A technology for synthesizing antiferromagnetic and thin film materials, applied in the application of magnetic film to substrate, multilayer film with spin exchange coupling, substrate/intermediate layer, etc., can solve the problem of limiting the development of read head and free layer switching field problems such as increase
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Embodiment 1
[0012] Example 1: Two kinds of SyAF structures were prepared by magnetron sputtering: one of them is a commonly used SyAF structure, and its multilayer film is respectively: tantalum (3nm) / cobalt-iron alloy (3nm) / metal ruthenium from the bottom up (0.5nm) / cobalt-iron alloy (5nm) (the data in brackets is the thickness of the film, and nm represents nanometers); the other is the DSyAF structure proposed by the present invention, and its multilayer film is respectively: tantalum (3nm) from the bottom to the top / Cobalt-iron alloy (5nm) / metal ruthenium (0.5nm) / cobalt-iron alloy (3nm) / metal ruthenium (0.5nm) / cobalt-iron alloy (5nm), which is characterized by a double-layer ferromagnetic / ruthenium layer alternating structure. Through testing, it is found that the DSyAF structure has a strong antiferromagnetic coupling effect, and has a higher saturation field, lower saturation magnetization and coercive force than SyAF. Annealing the samples of these two structures revealed that the...
Embodiment 2
[0013] Example 2: In the experiment, by changing the material and the thickness of each layer in DSyAF, a total of 28 samples of structures were prepared by using magnetron sputtering and molecular beam epitaxy. The specific structures are shown in the following table:
[0014] thickness
[0015] Through the test method, when the metal ruthenium layer thickness is 0.5nm, DSyAF has better magnetic properties and thermal stability.
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