Bi-synthesizing inverse iron magnetic structure film material

A technology for synthesizing antiferromagnetic and thin film materials, applied in the application of magnetic film to substrate, multilayer film with spin exchange coupling, substrate/intermediate layer, etc., can solve the problem of limiting the development of read head and free layer switching field problems such as increase

Inactive Publication Date: 2008-06-18
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The read head that is widely used in computer hard disks is a current parallel planar spin valve (CIP-SPV) metal multilayer film device. The common SPV structure of this ferromagnetic layer / isolation layer / ferromagnetic layer / antiferromagnetic layer , because the demagnetization field generated by the free layer induces swirl magnetic domains, which increases the switching field of the free layer, thus limiting the further development of the read head

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Example 1: Two kinds of SyAF structures were prepared by magnetron sputtering: one of them is a commonly used SyAF structure, and its multilayer film is respectively: tantalum (3nm) / cobalt-iron alloy (3nm) / metal ruthenium from the bottom up (0.5nm) / cobalt-iron alloy (5nm) (the data in brackets is the thickness of the film, and nm represents nanometers); the other is the DSyAF structure proposed by the present invention, and its multilayer film is respectively: tantalum (3nm) from the bottom to the top / Cobalt-iron alloy (5nm) / metal ruthenium (0.5nm) / cobalt-iron alloy (3nm) / metal ruthenium (0.5nm) / cobalt-iron alloy (5nm), which is characterized by a double-layer ferromagnetic / ruthenium layer alternating structure. Through testing, it is found that the DSyAF structure has a strong antiferromagnetic coupling effect, and has a higher saturation field, lower saturation magnetization and coercive force than SyAF. Annealing the samples of these two structures revealed that the...

Embodiment 2

[0013] Example 2: In the experiment, by changing the material and the thickness of each layer in DSyAF, a total of 28 samples of structures were prepared by using magnetron sputtering and molecular beam epitaxy. The specific structures are shown in the following table:

[0014] thickness

[0015] Through the test method, when the metal ruthenium layer thickness is 0.5nm, DSyAF has better magnetic properties and thermal stability.

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Abstract

The invention relates to a double compound antiferromagnetic structure film material, belonging to a functional material field. The invention is applied to a spin valve and is used as a basic part of a high density reading-out magnetic-head, a magnetic random access memory, a high sensitive sensor, and other spin electronic components. The invention is characterized in that the material comprises six metal films of a precious metal seed layer, a ferromagnetic metal layer, and a ruthenium layer, etc.; a bottom layer of the metal multi-layer film is the precious tantalum and copper with a thickness of 1 to 10 nanometers; a second layer above the bottom is a cobalt, cobalt-iron alloy and ferronickel alloy ferromagnetic metal layer with a thickness of 0.5 to 10 nanometers; the third layer is the ruthenium layer with a thickness of 0.1 to 1.2 nanometers; the fourth layer is the cobalt, cobalt-iron alloy and ferronickel alloy ferromagnetic metal layer with a thickness of 0.5 to 10 nanometers; the fifth layer is the ruthenium layer with a thickness of 0.1 to 1.2 nanometers; and the sixth layer is the cobalt, cobalt-iron alloy and ferronickel alloy ferromagnetic metal layer with a thickness of 0.5 to 10 nanometers. Compared with an SyAF structure, the invention is provided with lower saturation magnetization strength, a higher saturation field, lower coercive force and better heating stability.

Description

technical field [0001] The invention belongs to the field of functional materials, and provides a double-synthesized antiferromagnetic structure thin film material, which will be widely used in spin valves for high-density readout heads, magnetic random access memories, high-sensitivity sensor devices, etc. The device lays the foundation. Background technique [0002] In today's information age, information storage technology is crucial, and the explosive growth of information volume requires a rapid increase in the density of information storage. The areal density of hard disks is increasing at a rate of 200% per year, so the output of the magnetic head elements is also required to be higher and higher. The read head that is widely used in computer hard disks is a current parallel planar spin valve (CIP-SPV) metal multilayer film device. The common SPV structure of this ferromagnetic layer / isolation layer / ferromagnetic layer / antiferromagnetic layer , because the demagneti...

Claims

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Application Information

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IPC IPC(8): H01F10/32H01F41/14B32B15/00
Inventor姜勇包瑾徐晓光苏喜平闫树科
OwnerUNIV OF SCI & TECH BEIJING