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Substrate holding mechanism and plasma processing device

A technology of substrate retention and plasma, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, electrical components, etc., can solve problems such as inability to detect semiconductor wafer misalignment, and achieve the effect of preventing abnormal discharge

Active Publication Date: 2008-07-23
TOKYO ELECTRON LTD
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Problems solved by technology

However, this method cannot detect misalignment of semiconductor wafers

Method used

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  • Substrate holding mechanism and plasma processing device
  • Substrate holding mechanism and plasma processing device
  • Substrate holding mechanism and plasma processing device

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Embodiment Construction

[0092] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

[0093] In addition, in this specification and drawings, the same code|symbol is attached|subjected to the component which has substantially the same functional structure, and repeated description is abbreviate|omitted.

[0094] (Example of structure of plasma processing apparatus)

[0095] First, an embodiment in which the present invention is applied to a multi-chamber processing apparatus including a plurality of plasma processing apparatuses will be described with reference to the drawings. FIG. 1 is an external perspective view of a processing device 100 according to this embodiment. The processing apparatus 100 shown in the figure is equipped with three plasma processing apparatuses for performing plasma processing on the board|substrate for flat panel displays (substrate for FPDs) G. Each plasma processing apparatus includes a processing cham...

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Abstract

The invention provides a substrate holding mechanism comprises an gas flow path (352) for supplying the gas to a loading platform (300) and substrate on the substrate holding surface of the loading platform (300); a plurality of gas vents (354) for guiding the gas from the gas flow path to the substrate holding surface; a protuberance (332) for detecting the displacement which protrudes the substrate holding surface of the loading platform and leaves outwards the perimeter of the substrate to treat by preset displacement tolerance amount (b); a pressure gauge (363) for measuring the pressureof the flow path; and control unit (400) wherein the leakage ratio of the gas from the gas vent is measured based on the detected pressure form pressure gauge when the substrate is held on the loading platform, and based on the measurement result, the control unit detects whether there is displacement of the substrate with displacement tolerance amount above the preset value or not.

Description

technical field [0001] The present invention relates to a substrate holding mechanism and a plasma processing device for holding Flat Panel Displays such as Liquid Crystal Displays and Electro-Luminescence Displays. Background technique [0002] In panel manufacturing of a flat panel display (FPD), elements, electrodes, wiring, etc. of a pixel are generally formed on a substrate made of an insulator such as glass. In various processes of such panel production, microprocessing such as etching, CVD, ashing, and sputtering is performed using a plasma processing apparatus. In a plasma processing apparatus, for example, a substrate is placed on the upper surface of a mounting table provided with a susceptor constituting a lower electrode in a decompressible processing chamber, and high-frequency power is supplied to the susceptor, thereby forming a process gas flow on the substrate. plasma, and predetermined processing such as etching is performed on the substrate by the plasma....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L21/66H01L21/00
CPCH01L21/67259H01L21/6833
Inventor 石田宽
Owner TOKYO ELECTRON LTD
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